Load Switch and PWM Application Power MOSFET BORN BM20P12A Featuring High Current Handling Capability

Name: Load Switch and PWM Application Power MOSFET BORN BM20P12A Featuring High Current Handling Capability
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BM20P12A
Availability: InStock

Key Attributes

Model Number: BM20P12A

Product Custom Attributes

Drain To Source Voltage:

20V

Current - Continuous Drain(Id):

12A

RDS(on):

30mΩ@2.5V

Operating Temperature -:

-55℃~+150℃

Gate Threshold Voltage (Vgs(th)):

1V@250uA

Type:

P-Channel

Reverse Transfer Capacitance (Crss@Vds):

198pF

Output Capacitance(Coss):

233pF

Input Capacitance(Ciss):

1.5nF

Pd - Power Dissipation:

18W

Gate Charge(Qg):

15.3nC@4.5V

Mfr. Part #:

BM20P12A

Package:

DFN2x2-6L

Product Description

Product Overview

The BM20P12A is a P-Channel Enhancement Mode Power MOSFET from BORN SEMICONDUCTOR, INC. Utilizing advanced trench technology, it offers excellent RDS(on), low gate charge, and high-density cell design for ultra-low on-resistance. This power MOSFET is suitable for use as a load switch or in PWM applications, providing high power and current handling capability. It is a lead-free product.

Product Attributes

Brand: BORN SEMICONDUCTOR, INC.
Product Type: P-Channel Enhancement Mode Power MOSFET
Lead Status: Lead free product is acquired
Package Type: DFN2x2-6L

Technical Specifications

Model	VDS	ID	RDS(ON) @ VGS = -2.5V (Typ.)	RDS(ON) @ VGS = -4.5V (Typ.)	Package	Marking
BM20P12A	-20V	-12A	20m	17m	DFN2x2-6L	20P12A

Electrical Characteristics (@TA=25C unless otherwise noted)

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
BVDS	Drain-Source Breakdown Voltage	VGS = 0V, ID =-250uA	-20			V
IDSS	Zero Gate Voltage Drain Current	VDS = -20V, VGS = 0V			-1.0	uA
IGSS	Gate Leakage Current	VGS = 12V,VDS =0V			100	nA
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = -250uA	-0.4	-0.7	-1.0	V
RDS(on)	Drain-Source On-State Resistance	VGS = -4.5V, ID = -5.0A		17	22	m
RDS(on)	Drain-Source On-State Resistance	VGS = -2.5V, ID = -4.0A		20	30	m
gfs	Forward transconductance	VDS = -10V, ID = -5A		20		S

Dynamic Characteristics (@TA=25C unless otherwise noted)

Symbol	Parameter	Test Condition	Typ.	Unit
Ciss	Input Capacitance	VDS = -10V, VGS = 0V, f = 1.0MHz	1500	pF
Coss	Output Capacitance	VDS = -10V, VGS = 0V, f = 1.0MHz	233	pF
Crss	Reverse Transfer Capacitance	VDS = -10V, VGS = 0V, f = 1.0MHz	198	pF
td(on)	Turn-On Delay Time	VGEN = -4.5V, ID = -5A, VDD = -10V, RL = 1.2, RGEN = 1	10	ns
tr	Turn-On Rise Time	VGEN = -4.5V, ID = -5A, VDD = -10V, RL = 1.2, RGEN = 1	31	ns
td(off)	Turn-Off Delay Time	VGEN = -4.5V, ID = -5A, VDD = -10V, RL = 1.2, RGEN = 1	28	ns
tf	Turn-Off Fall Time	VGEN = -4.5V, ID = -5A, VDD = -10V, RL = 1.2, RGEN = 1	8	ns
Qg	Total Gate Charge	VDS = -10V, ID = -6A, VGS = -4.5V	15.3	nC
Qgs	Gate-Source Charge	VDS = -10V, ID = -6A, VGS = -4.5V	2.2	nC
Qgd	Gate-Drain Charge	VDS = -10V, ID = -6A, VGS = -4.5V	4.4	nC

Drain-source Body diode characteristics

Symbol	Parameter	Test Condition	Typ.	Max.	Unit
VSD	Diode Forward Voltage	IS = -1.25A, VGS = 0V	-0.7	-1.2	V

Package Dimensions (DFN2x2-6L)

Symbol	MIN.	Typ.	MAX.	Unit
A	1.95	2.00	2.05	mm
B	1.95	2.00	2.05	mm
C	0.45	0.50	0.55	mm
L	0.25	0.30	0.35	mm
L1	0.10	0.20	0.30	mm
L2		0.65		mm
L3	0.30	0.40	0.50	mm
L4		0.152		mm
L5	0.12	0.22	0.32	mm
L6	0.15	0.25	0.35	mm
L7	0.23	0.33	0.43	mm
a	0.90	1.00	1.10	mm
a1	0.72	0.82	0.92	mm
b	0.85	0.95	1.05	mm
b1	0.13	0.23	0.33	mm
l	0.25	0.30	0.35	mm
k	0.00		0.05	mm

Application

PWM applications
Load switch

Important Notes

Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information. Note(1): Package limited. Note(2): Surface mounted on 1 x 1 FR4 board. Note(3): t = 5 s. Note(4): Maximum under steady state conditions is 80 C/W. Pulse test: Pulse width 300 s, duty cycle 2 %.

2501061745_BORN-BM20P12A_C42432420.pdf

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