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quality Surface Mount N Channel MOSFET BORN 2N7002K with Super Dense Cell Structure and ESD Protection SOT 23 factory
quality Surface Mount N Channel MOSFET BORN 2N7002K with Super Dense Cell Structure and ESD Protection SOT 23 factory

Surface Mount N Channel MOSFET BORN 2N7002K with Super Dense Cell Structure and ESD Protection SOT 23

Key Attributes
Model Number: 2N7002K
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
3Ω@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description

Product Overview

The BORN SEMICONDUCTOR 2N7002K is an N-Channel MOSFET designed with a super high dense cell structure for extremely low RDS(ON). It offers reliable and rugged performance, making it suitable for surface mount applications. This ESD-protected device is available in a SOT-23 package.

Product Attributes

  • Brand: BORN SEMICONDUCTOR
  • Model: 2N7002K
  • Channel Type: N-Channel
  • Package: SOT-23
  • Features: ESD protected

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
VDS Drain-Source Voltage 60 V
ID Continuous Drain Current 0.3 A
RDS(on) Drain-Source On-Resistance VGS = 10V, ID = 300mA 3.0
RDS(on) Drain-Source On-Resistance VGS = 4.5V, ID = 200mA 4.0
VGS Gate-Source Voltage 20 V
PD Maximum Power Dissipation @TA=25C 0.225 W
TJ Junction Temperature 150 C
Tstg Storage Temperature -55 +150 C
RJA Junction-to-Ambient Thermal Resistance 556 C/W
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 60 V
VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250uA 1 1.5 2.5 V
IDSS Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V 1 uA
IGSS1 Gate-Source Leakage Current VGS = 20V, VDS = 0V 10 uA
IGSS2 Gate-Source Leakage Current VGS = 10V, VDS = 0V 200 nA
IGSS3 Gate-Source Leakage Current VGS = 5V, VDS = 0V 100 nA
VSD Diode Forward Voltage VGS = 0V, IS = 200mA 1.2 V
Qr Recovered Charge VGS = 0V, IS = 300mA, VR = 25V, dIs/dt = -100A/uS 30 nC
Ciss Input Capacitance VDS = 10V, VGS = 0V, f = 1MHz 40 pF
Coss Output Capacitance 30 pF
Crss Reverse Transfer Capacitance 10 pF
td(on) Turn-on Delay Time VDS = 10V, VDD = 50V, RG = 50, RGS = 50, RL = 250 10 nS
td(off) Turn-off Delay Time 15 nS
trr Reverse Recovery Time VGS = 0V, IS = 300mA, VR = 25V, dIs/dt = -100A/uS 30 nS
BVGSO Gate-Source Breakdown Voltage Igs = 1mA(Open Drain) 21.5 30 V
Package Marking Base Qty Delivery Mode
2N7002K 72K Tape and reel
Symbol MILLIMETER MIN. Typ. MAX.
A 0.90 1.00 1.10
A1 0.01 0.10
A2 0.50 0.60 0.70
D 2.80 2.90 3.00
b 0.25 0.35 0.45
E 2.10 2.30 2.50
E1 1.20 1.30 1.40
e 1.80 1.90 2.00
L 0.25 0.35 0.45
0 8
Symbol MILLIMETER Quantity
A 177.80.2 3000PCS
B 3.1
C 13.50
D 9.60.3
E 750.2
F 12.30.3
T1 1.00.2

2411191600_BORN-2N7002K_C42387582.pdf

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