High voltage switching device BLUE ROCKET IRF840 N channel MOSFET for industrial power systems
Key Attributes
Model Number:
IRF840
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
850mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Output Capacitance(Coss):
195pF
Input Capacitance(Ciss):
2.04nF
Pd - Power Dissipation:
-
Mfr. Part #:
IRF840
Package:
TO-220
Product Description
Product Overview
The IRF840 is an N-channel MOSFET in a TO-220 plastic package, designed for high efficiency switching DC/DC converters and switch mode power supplies. It features low gate charge, low feedback capacitance, and fast switching speeds, making it well-suited for demanding power applications.
Product Attributes
- Brand: Not explicitly stated, but implied by the datasheet source (fsbrec.com)
- Package Type: TO-220 Plastic Package
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | V |
| Drain Current (Tc=25) | ID(Tc=25) | 8.0 | A |
| Drain Current (Tc=100) | ID(Tc=100) | 5.1 | A |
| Pulsed Drain Current | IDM | 32 | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Avalanche Current | IAR | 8 | A |
| Single Pulsed Avalanche Energy | EAS | 320 | mJ |
| Repetitive Avalanche Energy | EAR | 13.4 | mJ |
| Total Power Dissipation (Tc=25) | PD(Tc=25) | 134 | W |
| Junction and Storage Temperature Range | TJ,TSTG | -55 to 150 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 500 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=500V, VGS=0V | 10 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=400V, TC=125 | 100 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=30V, VDS=0V | 0.1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 4.0 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=4.0A | 0.70 | 0.85 | ||
| Forward Transconductance | gFS | VDS=40V, ID=4.0A | 7.0 | S | ||
| Forward On Voltage | VSD | VGS=0V, IS=8A | 1.5 | V | ||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 1570 | 2040 | pF | |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | 150 | 195 | pF | |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | 15 | 20 | pF | |
| Turn-On Delay Time | td(on) | VDD=250V, ID=8A, RG=25 | 25 | 60 | ns | |
| Turn-On Rise Time | tr | VDD=250V, ID=8A, RG=25 | 75 | 160 | ns | |
| Turn-Off Delay Time | td(off) | VDD=250V, ID=8A, RG=25 | 125 | 260 | ns | |
| Turn-Off Fall Time | tf | VDD=250V, ID=8A, RG=25 | 75 | 160 | ns |
Packaging & Marking
Marking Instructions
The marking on the device includes:
- BR: Company Code
- IRF840: Product Type
- ****: Lot No. Code (changes with Lot No.)
Packaging Specifications
BULK Package:
| Package Type | Units/Bag | Bags/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimension (unit: mm) |
|---|---|---|---|---|---|---|
| TO-220/F | 200 | 10 | 2,000 | 5 | 10,000 | 560245195 |
TUBE Package:
| Package Type | Units/Tube | Tubes/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimension (unit: mm) |
|---|---|---|---|---|---|---|
| TO-220/F | 50 | 20 | 1,000 | 5 | 5,000 | 575290180 |
Resistance to Soldering Heat Test Conditions
- Temperature: 2705
- Time: 101 sec.
Temperature Profile for Dip Soldering (Pb-Free)
- Preheating: 25~150, Time: 60~90 sec.
- Peak Temp.: 2555, Duration: 50.5 sec.
- Cooling Speed: 2~10/sec.
2410121236_BLUE-ROCKET-IRF840_C358409.pdf
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