252 Plastic Package N Channel MOSFET BLUE ROCKET BRCS080N04SDP for High Current Switching Applications

Name: 252 Plastic Package N Channel MOSFET BLUE ROCKET BRCS080N04SDP for High Current Switching Applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS080N04SDP
Availability: InStock

Key Attributes

Model Number: BRCS080N04SDP

Product Custom Attributes

Drain To Source Voltage:

40V

Current - Continuous Drain(Id):

54A

RDS(on):

7.5mΩ@10V

Operating Temperature -:

-55℃~+150℃

Gate Threshold Voltage (Vgs(th)):

1.6V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

30pF

Input Capacitance(Ciss):

850pF

Output Capacitance(Coss):

115pF

Pd - Power Dissipation:

39W

Gate Charge(Qg):

21nC@10V

Mfr. Part #:

BRCS080N04SDP

Package:

TO-252

Product Description

Product Overview

The BRCS080N04SDP is an N-channel MOSFET in a TO-252 plastic package. Designed for high efficiency, this device is well-suited for high-power DC/DC converters and switch-mode power supplies. It offers a drain-source voltage of 40V and a continuous drain current of 54A. Key features include a low on-resistance of 8m (Typ. 7.5m) at VGS=10V and it is an HF (Halogen-Free) product.

Product Attributes

Brand: fsbrec (inferred from URL)
Product Type: N-Channel MOSFET
Package Type: TO-252
Material: Plastic
Certification: HF Product (Halogen-Free)
Marking Code: BR, 080N04S, **** (Lot No. Code)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDS				40	V
Drain Current (Tc=25)	ID(Tc=25)				54	A
Drain Current - Pulsed	IDM				113	A
Gate-Source Voltage	VGS				±20	V
Single Pulsed Avalanche Energy	EAS				67.6	mJ
Avalanche Current	IAS				13	A
Power Dissipation (Tc=25)	PD(Tc=25)				39	W
Operating and Storage Temperature Range	TJ,Tstg		-55		150
Junction-to-Ambient (t≤10s)	RθJA			25		/W
Junction-to-Ambient (Steady-State)				55		/W
Junction-to-Case (Steady-State)	RθJC			3.2		/W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250μA	40	47		V
Zero Gate Voltage Drain Current	IDSS	VDS=40V, VGS=0V			1	μA
Gate-Body Leakage Current (Forward)	IGSS	VGS=±20V, VDS=0V		±0.1		μA
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=250μA	1.0	1.6	2.5	V
Static Drain-Source On-Resistance	RDS(on)	VGS=10V, ID=20A		7.5	8	mΩ
Static Drain-Source On-Resistance	RDS(on)	VGS=4.5V, ID=10A		10	13	mΩ
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=1A		1.2		V
Input Capacitance	Ciss	VDS=25V, VGS=0V, f=1.0MHz		850		pF
Output Capacitance	Coss	VDS=25V, VGS=0V, f=1MHz		115		pF
Reverse Transfer Capacitance	Crss	VDS=25V, VGS=0V, f=1MHz		30		pF
Gate resistance	Rg	VGS=0V, VDS=0V, f=1MHz		2.4		Ω
Total Gate Charge (10V)	Qg(10V)	VGS=10V, VDS=20V, ID=20A		21		nC
Total Gate Charge (4.5V)	Qg(4.5V)	VGS=4.5V, VDS=20V, ID=10A		8.6		nC
Gate Source Charge	Qgs	VGS=10V, VDS=20V, ID=20A		5.7		nC
Gate Drain Charge	Qgd	VGS=10V, VDS=20V, ID=20A		3		nC
Electrical Characteristics (Ta=25)
Turn-On Delay Time	td(on)	VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3.0Ω		7.5		ns
Turn-On Rise Time	tr	VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3.0Ω		2.1		ns
Turn-Off Delay Time	td(off)	VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3.0Ω		23		ns
Turn-Off Fall Time	tf	VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3.0Ω		3		ns

Pinout: PIN 1: G, PIN 2: D, PIN 3: S, PIN 4: D

Applications: High efficiency switching DC/DC converters and switch mode power supplies.

Package Dimensions: See attached diagram.

Marking Instructions: BR (Company Code), 080N04S (Product Type), **** (Lot No. Code).

Soldering Profile (Pb-Free):

Preheating: 150~180, Time: 60~90 sec.
Peak Temp.: 245±5, Duration: 5±0.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions: Temp.: 260±5, Time: 10±1 sec.

Packaging Specifications:

Reel Package: TO-252, 2,500 Units/Reel
Tube Package: TO-251/252, 75 Units/Tube

2504101957_BLUE-ROCKET-BRCS080N04SDP_C46962486.pdf

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