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quality N Channel MOSFET 100 Volt Bruckewell MSH100N045SA Trench DMOS for Synchronous Rectifier Applications factory
quality N Channel MOSFET 100 Volt Bruckewell MSH100N045SA Trench DMOS for Synchronous Rectifier Applications factory

N Channel MOSFET 100 Volt Bruckewell MSH100N045SA Trench DMOS for Synchronous Rectifier Applications

Key Attributes
Model Number: MSH100N045SA
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
100A
RDS(on):
4.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF@50V
Output Capacitance(Coss):
609pF
Input Capacitance(Ciss):
4.725nF
Pd - Power Dissipation:
208W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
MSH100N045SA
Package:
PDFN-8(5x6)
Product Description

Product Overview

The MSH100N045SA is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is ideally suited for high efficiency, fast switching applications. The device adheres to RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include Motor Drivers, Load Switches, Synchronous Rectifiers, and BMS (Battery Management Systems).

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Technology: Trench DMOS
  • Channel Type: N-Channel
  • Compliance: RoHS, Green Product
  • Special Guarantee: 100% EAS Guaranteed
  • Package Type: PDFN 5X6
  • Packing: 3,000/Reel

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current (TC =25°C) 100 A
ID Continuous Drain Current (TC =100°C) 95 A
IDM Pulsed Drain Current 480 A
IAS Single Pulse Avalanche Current (L =0.5mH) 53 A
EAS Single Pulse Avalanche Energy (L =0.5mH) 702 mJ
PD Power Dissipation (TC =25°C) 208 W
TJ/TSTG Operating Junction and Storage Temperature -55 150 °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient 62 °C/W
RθJC Maximum Junction-to-Case 0.6 °C/W
Electrical Characteristics (TJ=25°C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =250μA 2 3 4 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =250μA 100 - - V
IGSS Gate-Source Leakage Current VDS =0V, VGS =±20V - - ±100 nA
IDSS Drain-Source Leakage Current VDS =100V, VGS =0V, TJ =25°C - - 1 μA
IDSS Drain-Source Leakage Current VDS =100V, VGS =0V, TJ =125°C - - 10 μA
RDS (on) Static Drain-Source On-Resistance VGS =10V, ID =20A - 3.7 4.5 mΩ
EAS Single Pulse Avalanche Energy VDD =25V, L =0.5mH, IAS =20A 100 - - mJ
VSD Diode Forward Voltage IS =50A, VGS =0V, TJ =25°C - - 1.3 V
IS Continuous Source Current VG =VD =0V, Force Current - - 100 A
ISM Pulsed Source Current - - 200 A
Dynamic Characteristics
Qg Total Gate Charge VDS =50V ID =20A VGS =10V - 72 - nC
Qgs Gate-Source Charge - 28 - nC
Qgd Gate-Drain Charge - 15 - nC
td(on) Turn-On Delay Time VDD =50V ID =20A VGS =10V RG =3.0Ω - 35 - ns
tr Rise Time - 18 - ns
td(off) Turn-Off Delay Time - 45 - ns
tf Fall Time - 55 - ns
CISS Input Capacitance VDS =50V VGS =0V f =1.0MHz - 4725 - pF
COSS Output Capacitance - 609 - pF
CRSS Reverse Transfer Capacitance - 14 - pF
Rg Gate Resistance VGS =VDS =0V, f =1.0MHz - 1 - Ω
trr Reverse Recovery Time IF=30A, dI/dt=100A/μs, Tj=25°C - - 70 nS
Qrr Reverse Recovery Charge - - 170 nC

2410121637_Bruckewell-MSH100N045SA_C22465530.pdf

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