Durable TO 220 Package N Channel MOSFET BLUE ROCKET BRCS50N06RA with Halogen Free Construction
Key Attributes
Model Number:
BRCS50N06RA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
11.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
115pF
Output Capacitance(Coss):
128pF
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
2.64nF
Gate Charge(Qg):
47.5nC@10V
Mfr. Part #:
BRCS50N06RA
Package:
TO-220
Product Description
Product Overview
The BRCS50N06RA is an N-channel MOSFET housed in a TO-220 plastic package. It features low RDS(on), low gate charge, low Crss, and fast switching speeds, utilizing trench technology and being a halogen-free product. This MOSFET is ideally suited for low-voltage applications, including automotive circuits, DC/DC converters, and high-efficiency power conversion for portable and battery-operated products.
Product Attributes
- Brand: BR (implied by marking code)
- Product Type: N-Channel MOSFET
- Package Type: TO-220 Plastic Package
- Certifications: Halogen-free Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Drain Current (Tc=25) | ID(Tc=25) | 50 | A | |||
| Drain Current - Pulsed | IDM | 200 | A | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Avalanche Current | IAS | 20 | A | |||
| Single Pulsed Avalanche Energy | EAS | 170 | mJ | |||
| Power Dissipation (Tc=25) | PD(Tc=25) | 75 | W | |||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient (t ≤ 10s) | RJA | 12.5 | /W | |||
| Thermal Resistance-Junction to Case (Steady-State) | RJC | 1.7 | /W | |||
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 60 | 66 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | µA | ||
| VDS=48V, TC=150 | 10 | µA | ||||
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | ±0.1 | µA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 1 | 1.7 | 3 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=25A | 11.8 | 15 | mΩ | |
| VGS=4.5V, ID=18A | 15.5 | 20 | mΩ | |||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=25A | 1.25 | V | ||
| Gate Resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 1.49 | Ω | ||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 2640 | pF | ||
| Output Capacitance | Coss | 128 | pF | |||
| Reverse Transfer Capacitance | Crss | 115 | pF | |||
| Total Gate Charge (10V) | Qg(10V) | VGS=10V, VDS=30V, ID=20A | 47.5 | 68 | nC | |
| Total Gate Charge (4.5V) | Qg(4.5V) | 24 | 35 | nC | ||
| Gate Source Charge | Qgs | 6 | nC | |||
| Gate Drain Charge | Qgd | 14.5 | nC | |||
| Electrical Characteristics (Ta=25) | ||||||
| Turn-On Delay Time | td(on) | VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω | 8 | ns | ||
| Turn-On Rise Time | tr | 5 | ns | |||
| Turn-Off Delay Time | td(off) | 30 | ns | |||
| Turn-Off Fall Time | tf | 5.5 | ns | |||
Marking Instructions: BR **** 50N06
Temperature Profile for Dip Soldering (Pb-Free): Preheating: 25~150, Time: 60~90sec; Peak Temp.: 255±5, Duration: 5±0.5sec; Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Test Conditions: Temp.: 270±5, Time: 10±1 sec.
Packaging Specifications:
- BULK Package: TO-220/F, 200 Units/Bag, 2,000 Units/Inner Box, 10,000 Units/Outer Box.
- TUBE Package: TO-220/F, 50 Units/Tube, 1,000 Units/Inner Box, 5,000 Units/Outer Box.
2504101957_BLUE-ROCKET-BRCS50N06RA_C46962474.pdf
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