252 Package BLUE ROCKET BRCS850N10SDPQ N channel MOSFET Designed for DC DC Converter Power Efficiency
Key Attributes
Model Number:
BRCS850N10SDPQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
12A
RDS(on):
85mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
105pF
Pd - Power Dissipation:
21.5W
Input Capacitance(Ciss):
180pF
Gate Charge(Qg):
6nC@10V
Mfr. Part #:
BRCS850N10SDPQ
Package:
TO-252
Product Description
Product Overview
The BRCS850N10SDPQ is an N-channel MOSFET in a TO-252 plastic package, designed for power management in DC/DC converters. It features low on-resistance, fast switching speeds, and high reliability, meeting AEC-Q101 standards. This HF (halogen-free) product is particularly suited for LED backlight DC-DC boost converter solutions in automotive applications, addressing stringent requirements.
Product Attributes
- Brand: FS (implied by website URL)
- Product Type: N-CHANNEL MOSFET
- Package Type: TO-252 Plastic Package
- Certifications: AEC-Q101 Qualified
- Material: Halogen-Free (HF Product)
- Marking Code: BR Q **** 850N10S
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | |||||||
| Drain-Source Voltage | VDS | 100 | V | ||||
| Drain Current (Tc=25) | ID(Tc=25) | 12 | A | ||||
| Drain Current - Pulsed | IDM | 28 | A | ||||
| Gate-Source Voltage | VGS | 20 | V | ||||
| Single Pulsed Avalanche Energy | EAS | 35 | mJ | ||||
| Avalanche Current | IAS | 2.1 | A | ||||
| Power Dissipation (Tc=25) | PD(Tc=25) | 21.5 | W | ||||
| Operating and Storage Temperature Range | TJ,Tstg | -55 | 150 | ||||
| Junction-to-Ambient (t10s) | RJA | 20 | /W | ||||
| Junction-to-Ambient (Steady-State) | 50 | /W | |||||
| Junction-to-Case (Steady-State) | RJC | 5.8 | /W | ||||
| Electrical Characteristics (Ta=25) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | 106 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | A | |||
| Gate-Body Leakage Current (Forward) | IGSS | VGS=20V, VDS=0V | 0.1 | A | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 1.8 | 3.0 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=20A | 77 | 85 | m | ||
| VGS=4.5V, ID=10A | 100 | 130 | m | ||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=1A | 1.2 | V | |||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 180 | pF | |||
| Output Capacitance | Coss | 105 | pF | ||||
| Reverse Transfer Capacitance | Crss | 15 | pF | ||||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 1.5 | ||||
| Electrical Characteristics (Ta=25) | |||||||
| Total Gate Charge (Qg(10V)) | Qg(10V) | VGS=10V, VDS=50V, ID=5A | 6.0 | nC | |||
| Total Gate Charge (Qg(4.5V)) | 2.9 | nC | |||||
| Gate Source Charge | Qgs | 1.0 | nC | ||||
| Gate Drain Charge | Qgd | 1.1 | nC | ||||
| Turn-On Delay Time | td(on) | VGS=10V, VDS=50V, RL=10, RGEN=3 | 6.2 | ns | |||
| Turn-On Rise Time | tr | 2.7 | ns | ||||
| Turn-Off Delay Time | td(off) | 18 | ns | ||||
| Turn-Off Fall Time | tf | 2.6 | ns | ||||
| Packaging & Soldering | |||||||
| Package Dimensions | See Package Dimensions Diagram | ||||||
| Reel Package Units/Reel | 2,500 | Units | |||||
| Tube Package Units/Tube | 75 | Units | |||||
| IR Reflow Soldering (Pb-Free) Preheat Temp | 60~120 sec | 150~200 | |||||
| IR Reflow Soldering (Pb-Free) Peak Temp | 50.5 sec | 2555 | |||||
| Resistance to Soldering Heat Test Conditions | 101 sec | 2605 | |||||
2411121107_BLUE-ROCKET-BRCS850N10SDPQ_C36499023.pdf
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