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quality P Channel 40V Fast Switching MOSFET Bruckewell MSQ41P15 designed for power management applications factory
quality P Channel 40V Fast Switching MOSFET Bruckewell MSQ41P15 designed for power management applications factory

P Channel 40V Fast Switching MOSFET Bruckewell MSQ41P15 designed for power management applications

Key Attributes
Model Number: MSQ41P15
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
222pF
Number:
1 P-Channel
Output Capacitance(Coss):
323pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
3.5nF
Gate Charge(Qg):
28nC@4.5V
Mfr. Part #:
MSQ41P15
Package:
SOP-8
Product Description

Product Overview

The MSQ41P15 is a P-Channel, 40V Fast Switching MOSFET designed for efficient power management. It features advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. This MOSFET is ideal for applications requiring fast switching speeds and high reliability, with a 100% EAS guaranteed rating and green device availability.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -40 V
VGS Gate-Source Voltage ±20 V
ID@TA=25 Continuous Drain Current, VGS @ -10V1 -8.7 A
ID@TA=70 Continuous Drain Current, VGS @ -10V1 -7 A
IDM Pulsed Drain Current2 -18 A
EAS Single Pulse Avalanche Energy3 146 mJ
IAS Avalanche Current -54 A
PD@TA=25 Total Power Dissipation4 1.5 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 --- 85 /W
RJC Thermal Resistance Junction-Case1 --- 24 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 --- --- V
ΔBVDSS/ΔTJ BVDSS Temperature Coefficient Reference to 25 , ID=-1mA -0.023 --- V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-8A --- 13 mΩ
VGS=-4.5V , ID=-6A --- 20 V
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 --- -2.5 V
ΔVGS(th) VGS(th) Temperature Coefficient 4.74 --- mV/
IDSS Drain-Source Leakage Current VDS=-32V , VGS=0V , TJ=25 --- 1 µA
VDS=-32V , VGS=0V , TJ=55 --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=-5V , ID=-8A 27 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 7 --- Ω
Qg Total Gate Charge (-4.5V) VDS=-20V , VGS=-4.5V , ID=-6A 28 --- nC
Qgs Gate-Source Charge 7.7 ---
Qgd Gate-Drain Charge 7.5 ---
Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-1A 40 --- ns
Tr Rise Time 35 ---
Td(off) Turn-Off Delay Time 100 ---
Tf Fall Time 9.6 ---
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz 3500 --- pF
Coss Output Capacitance 323 ---
Crss Reverse Transfer Capacitance 222 ---
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- -8.7 A
ISM Pulsed Source Current2,5 --- -18 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- -1 V

Notes:

  1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
  3. The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-54A.
  4. The power dissipation is limited by 150 junction temperature.
  5. The data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.

2412061551_Bruckewell-MSQ41P15_C42407751.pdf

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