Power Management Dual N Channel MOSFET BLUE ROCKET BRCS200N04DSC with Low RDS ON and Low Gate Charge

Name: Power Management Dual N Channel MOSFET BLUE ROCKET BRCS200N04DSC with Low RDS ON and Low Gate Charge
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS200N04DSC
Availability: InStock

Key Attributes

Model Number: BRCS200N04DSC

Product Custom Attributes

Drain To Source Voltage:

40V

Current - Continuous Drain(Id):

Operating Temperature -:

-55℃~+150℃

RDS(on):

36mΩ@4.5V

Gate Threshold Voltage (Vgs(th)):

2.5V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

260pF@10V

Number:

2 N-Channel

Input Capacitance(Ciss):

880pF@10V

Pd - Power Dissipation:

Gate Charge(Qg):

6.5nC@10V

Mfr. Part #:

BRCS200N04DSC

Package:

SOP-8

Product Description

Product Overview

The BRCS200N04DSC is a Dual N-Channel Power Trench MOSFET housed in a SOP-8 plastic package. It features low RDS(ON) and low gate charge, making it suitable for a wide range of power conversion applications. This product is halogen-free and designed for applications such as battery protection, load switching, and power management.

Product Attributes

Brand: FS (implied by datasheet URL and company code 'BR')
Product Type: Dual N-Channel Power Trench MOSFET
Package Type: SOP-8 Plastic Package
Halogen-Free: Yes

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions	Min	Typ	Max
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDSS	40	V
Gate-Source Voltage	VGS	±20	V
Drain Current	ID	8	A
Pulsed Drain Current	IDM	6	A
Power Dissipation (TA=25)	PD	2.0	W
Avalanche Current	IAS	11.7	A
Avalanche energy (L=0.5mH)	EAS	54.8	mJ
Maximum Junction-to-Ambient t≤10s	RθJA	62.5	°C/W
Maximum Junction-to-Ambient Steady-State		90	°C/W
Maximum Junction-to-Lead Steady-State	RθJC	40	°C/W
Operating and Junction Temperature Range	Tj, Tstg	-55150	°C
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	40	V	VGS=0V, ID=250μA	40	45
Zero Gate Voltage Drain Current	IDSS	1.0	μA	VDS=40V, VGS=0V
Gate-Body Leakage Current Forward	IGSS	±100	nA	VGS=±20V, VDS=0V
Gate Threshold Voltage	VGS(th)		V	VDS=VGS, ID=250μA	1.0	1.7	2.5
Static Drain-Source On-Resistance	RDS(on)		mΩ	VGS=10V, ID=4A		19.9	22
			mΩ	VGS=4.5V, ID=3A		29.5	36
Diode Forward Voltage	VSD		V	IS=1A, VGS=0V		0.75	1.0
Electrical Characteristics (Ta=25)
Input Capacitance	Ciss	880	pF	VDS=10V, VGS=0V, f=1.0MHz
Output Capacitance	Coss	790	pF
Reverse Transfer Capacitance	Crss	260	pF
Turn-On Delay Time	td(on)		ns	VGS=10V, VDS=20V, RGEN=3Ω, RL=2.5Ω		4
Turn-On Rise Time	tr		ns			3
Turn-Off Delay Time	td(off)		ns			15
Turn-Off Fall Time	tf		ns			2
Total Gate Charge Qg(10V)	Qg(10V)	6.5	nC	VGS=10V, VDS=20V, ID=8A
Total Gate Charge Qg(4.5V)		3	nC
Gate-Source Charge	Qgs	1.2	nC
Gate-Drain Charge	Qgd	1.1	nC

Marking Instructions:

BR: Company Code
200N04D: Product Type
****: Lot No. Code (changes with Lot No.)

Packaging Specifications:

Package Type: SOP/ESOP-8
Units/Reel: 4,000
Reels/Inner Box: 2
Units/Inner Box: 8,000
Inner Boxes/Outer Box: 6
Units/Outer Box: 48,000
Reel Dimensions: 13"×12
Inner Box Dimensions: 360×360×50
Outer Box Dimensions: 380×335×366

Notices:

Temperature Profile for IR Reflow Soldering (Pb-Free):
Preheating: 150~180, Time: 60~90 sec.
Peak Temp.: 245±5, Duration: 5±0.5 sec.
Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Test Conditions:
Temperature: 260±5
Time: 10±1 sec.

2410121231_BLUE-ROCKET-BRCS200N04DSC_C22449006.pdf

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