N Channel MOSFET Bruckewell MSD60N085 60 Volt Trench DMOS Device for Switching and Motor Control
Product Overview
The MSD60N085 is an N-Channel 60-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-resistance (RDS(ON)) and enhance switching performance, making it ideal for high-efficiency, fast-switching applications. The device is designed to withstand high energy pulses in avalanche and commutation modes. It meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include motor control, DC/DC converters, and synchronous rectifier applications.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Line: MSD60N085
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Reliability: 100% EAS guaranteed
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current @ TC=25C | 58 | A | |||
| ID | Continuous Drain Current @ TC=100C | 37 | A | |||
| IDM | Pulsed Drain Current2 | 250 | A | |||
| IAS | Single Pulse Avalanche Current, L =0.1mH3 | 23 | A | |||
| EAS | Single Pulse Avalanche Energy, L =0.1mH3 | 26.5 | mJ | |||
| PD | Power Dissipation (TC=25C) | 50 | W | |||
| Tj, Tstg | Operating Junction and Storage Temperature | -55 | ~ | +150 | C | |
| Thermal Resistance Ratings | ||||||
| RJA | Maximum Junction-to-Ambient1 | 60 | C/W | |||
| RJC | Maximum Junction-to-Case | 3 | C/W | |||
| Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250A | 1.2 | - | 2.3 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250A | 60 | - | - | V |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =48V, VGS =0V, TJ =25C | - | - | 1 | µA |
| IDSS | Drain-Source Leakage Current | VDS =48V, VGS =0V, TJ =55C | - | 5 | - | µA |
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =10V, ID =15A | - | 7 | 8.5 | mΩ |
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =4.5V, ID =15A | - | 10.5 | 12.5 | mΩ |
| EAS | Single Pulse Avalanche Energy5 | VDD =50V, L =0.1mH, IAS =11A | 6 | - | - | mJ |
| VSD | Diode Forward Voltage2 | IS =1A, VGS =0V, TJ =25C | - | - | 1.2 | V |
| IS | Continuous Source Current1,6 | VG =VD =0V, Force Current | - | - | 30 | A |
| ISM | Pulsed Source Current2,6 | - | - | 58 | A | |
| Dynamic | ||||||
| Qg | Total Gate Charge2 | VDS =30V, VGS =10V, ID =15A | - | 15 | - | nC |
| Qgs | Gate-Source Charge | - | 3.5 | - | nC | |
| Qgd | Gate-Drain Charge | - | 4.2 | - | nC | |
| td(on) | Turn-On Delay Time2 | VDS =30V, ID =15A, VGS =10V, RG =3.3Ω | - | 7 | - | ns |
| tr | Rise Time | - | 4.5 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 26 | - | ns | |
| tf | Fall Time | - | 5 | - | ns | |
| CISS | Input Capacitance | VDS =30V, VGS =0V, f =1.0MHz | - | 1270 | - | pF |
| COSS | Output Capacitance | - | 479 | - | pF | |
| CRSS | Reverse Transfer Capacitance | - | 40 | - | pF | |
| trr | Reverse Recovery Time | IF=15A, dl/dt=100A/µs, Tj=25°C | - | 22 | - | nS |
| Qrr | Reverse Recovery Charge | - | 72 | - | nC | |
| Rg | Gate Resistance | VDS =0V, VGS =0V, f =1.0MHz | - | 1.3 | - | Ω |
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3 The EAS data shows maximum rating. The test condition is VDD=50V, VGS=10V, L=0.1mH, IAS=23A.
4 The power dissipation is limited by 150 junction temperature.
5 The Min. value is 100% EAS tested guarantee.
6 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2412061551_Bruckewell-MSD60N085_C42407726.pdf
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