High Speed Switching N Channel MOSFET Bruckewell MSD100N110SC 100 Volt with Robust Avalanche Handling
Key Attributes
Model Number:
MSD100N110SC
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
RDS(on):
11mΩ@10V
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF
Number:
1 N-channel
Output Capacitance(Coss):
665pF
Pd - Power Dissipation:
94W
Input Capacitance(Ciss):
1.95nF
Gate Charge(Qg):
28.8nC@10V
Mfr. Part #:
MSD100N110SC
Package:
TO-252
Product Description
Product Overview
The MSD100N110SC is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-resistance (RDS(ON)), enhance switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approval.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Compliance: RoHS, Green Product
- EAS Guarantee: 100% Guaranteed
Technical Specifications
| Parameter | Value | Units |
|---|---|---|
| Model | MSD100N110SC | - |
| Channel Type | N-Channel | - |
| Drain-Source Voltage (VDS) | 100 | V |
| Gate-Source Voltage (VGS) | +20/-12 | V |
| Continuous Drain Current (TC =25C) | 60 | A |
| Continuous Drain Current (TC =100C) | 38 | A |
| Pulsed Drain Current (IDM) | 240 | A |
| Single Pulse Avalanche Current (IAS, L =0.1mH) | 62 | A |
| Single Pulse Avalanche Energy (EAS, L =0.1mH) | 192 | mJ |
| Power Dissipation (PD, TC =25C) | 94 | W |
| Power Dissipation (PD, TA =25C) | 2 | W |
| Operating Junction and Storage Temperature (TJ/TSTG) | -50 to +150 | C |
| RDS(ON) @ VGS =10V | 11 | m |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V |
| Drain-Source Breakdown Voltage (BVDSS) | 100 | V |
| Forward Transconductance (gfs) | 10 | S |
| Gate-Source Leakage Current (IGSS) | - 100 | nA |
| Drain-Source Leakage Current (IDSS, TJ =25C) | - 1 | A |
| Drain-Source Leakage Current (IDSS, TJ =85C) | - 10 | A |
| Diode Forward Voltage (VSD) | - 1.2 | V |
| Continuous Source Current (IS) | - 60 | A |
| Pulsed Source Current (ISM) | - 120 | A |
| Total Gate Charge (Qg) | 28.8 | nC |
| Gate-Source Charge (Qgs) | 5.8 | nC |
| Gate-Drain Charge (Qgd) | 9.2 | nC |
| Turn-On Delay Time (td(on)) | 22 | ns |
| Rise Time (tr) | 18.7 | ns |
| Turn-Off Delay Time (td(off)) | 42 | ns |
| Fall Time (tf) | 22 | ns |
| Input Capacitance (CISS) | 1950 | pF |
| Output Capacitance (COSS) | 665 | pF |
| Reverse Transfer Capacitance (CRSS) | 33 | pF |
| Gate Resistance (Rg) | 1.4 | |
| Package Type | TO-252 | - |
| Packing Information | 2,500/Reel | - |
Typical Applications
- Networking
- Load Switch
- LED Applications
- Quick Charger
2412061551_Bruckewell-MSD100N110SC_C42407722.pdf
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