P Channel MOSFET Bruckewell MS34P01 30 Volt Drain Source Voltage for Low Voltage Applications
Key Attributes
Model Number:
MS34P01
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
120mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Output Capacitance(Coss):
115pF
Pd - Power Dissipation:
1.38W
Input Capacitance(Ciss):
954pF
Gate Charge(Qg):
9.4nC@4.5V
Mfr. Part #:
MS34P01
Package:
SOT-23
Product Description
Product Overview
The Bruckewell MS34P01 is a P-Channel 30-V (D-S) MOSFET designed using advanced processing techniques to achieve extremely low on-resistance and high efficiency. This cost-effective device is ideal for commercial-industrial surface mount applications and low voltage scenarios such as DC/DC converters. It meets RoHS and Green Product requirements, offering full function reliability.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Type: P-Channel MOSFET
- Voltage Rating: 30 V (Drain-Source)
- Certifications: RoHS Compliant, Green Device Available
Technical Specifications
| Parameter | Value | Units | Conditions |
|---|---|---|---|
| Model | MS34P01 | ||
| Package Type | SOT-23 | ||
| Drain-Source Voltage (VDS) | -30 | V | |
| Gate-Source Voltage (VGS) | 12 | V | |
| Continuous Drain Current (ID) | -4.2 | A | (TA =25C) |
| Continuous Drain Current (ID) | -3.5 | A | (TA =70C) |
| Pulsed Drain Current (IDM) | -20 | A | (TA =25C) |
| Power Dissipation (PD) | 1.38 | W | (TA =25C) |
| Operating Junction and Storage Temperature (TJ/TSTG) | -55 to +150 | C | |
| Max. Junction-to-Ambient Thermal Resistance (RJA) | 90 | C/W | (Surface mounted on 1 in copper pad of FR4 board) |
| Gate Threshold Voltage (VGS(th)) | -0.5 to -1.3 | V | VDS =VGS, ID =-250A |
| Drain-Source Breakdown Voltage (BVDSS) | -30 | V | VGS =0V, ID =-250A |
| Forward Transconductance (gfs) | 9 | S | VDS =-5V, ID =-3A |
| Gate-Source Leakage Current (IGSS) | 100 | nA | VDS =0V, VGS =12V |
| Drain-Source Leakage Current (IDSS) | -1 | A | VDS =-24V, VGS =0V, TJ =25C |
| Drain-Source Leakage Current (IDSS) | -5 | A | VDS =-24V, VGS =0V, TJ =55C |
| Static Drain-Source On-Resistance (RDS(on)) | 53 | m | VGS =-10V, ID =-4.2A |
| Static Drain-Source On-Resistance (RDS(on)) | 65 | m | VGS =-4.5V, ID =-4.0A |
| Static Drain-Source On-Resistance (RDS(on)) | 120 | m | VGS =-2.5V, ID =-1.0A |
| Diode Forward Voltage (VSD) | -1.0 | V | IS =-1.2A, VGS =0V, TJ =25C |
| Continuous Source Current (IS) | -4.2 | A | (Diode) |
| Pulsed Source Current (ISM) | -8.4 | A | (Diode) |
| Total Gate Charge (Qg) | 9.4 | nC | VDS =-15V, ID =-4A, VGS =-4.5V |
| Gate-Source Charge (Qgs) | 2 | nC | VDS =-15V, ID =-4A, VGS =-4.5V |
| Gate-Drain Charge (Qgd) | 3 | nC | VDS =-15V, ID =-4A, VGS =-4.5V |
| Turn-On Delay Time (td(on)) | 6.3 | ns | VDS =-15V, VGS =-10V, RG =6.0, RL =3.6 |
| Rise Time (tr) | 3.2 | ns | VDS =-15V, VGS =-10V, RG =6.0, RL =3.6 |
| Turn-Off Delay Time (td(off)) | 38.2 | ns | VDS =-15V, VGS =-10V, RG =6.0, RL =3.6 |
| Fall Time (tf) | 12 | ns | VDS =-15V, VGS =-10V, RG =6.0, RL =3.6 |
| Input Capacitance (CISS) | 954 | pF | VDS =-15V, VGS =0V, f =1.0MHz |
| Output Capacitance (COSS) | 115 | pF | VDS =-15V, VGS =0V, f =1.0MHz |
| Reverse Transfer Capacitance (CRSS) | 77 | pF | VDS =-15V, VGS =0V, f =1.0MHz |
Typical Applications
- Battery Protection
- Load Switch
- Hand-held Instruments
- DC/DC Converters
2410121628_Bruckewell-MS34P01_C22465591.pdf
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