P channel MOSFET Bruckewell MS34P07 featuring advanced trench technology and green device compliance
Key Attributes
Model Number:
MS34P07
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
75mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 P-Channel
Input Capacitance(Ciss):
590pF@25V
Pd - Power Dissipation:
1.38W
Gate Charge(Qg):
15.2nC@10V
Mfr. Part #:
MS34P07
Package:
SOT-23
Product Description
Product Overview
The MS34P07 is a high-performance P-channel Trench MOSFET from Bruckewell Technology Corporation, designed with extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch applications and PWM applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Typical applications include battery protection, load switching, and use in hand-held instruments.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Series: MS34P
- Channel Type: P-Channel
- Voltage Rating: 30-V (D-S)
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS Compliant, Green Device Available
- Package Type: SOT-23
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | (unless otherwise specified) | -30 | V | ||
| VGS | Gate-Source Voltage | (unless otherwise specified) | 20 | V | ||
| ID | Continuous Drain Current | (TA =25C) | -4.1 | A | ||
| ID | Continuous Drain Current | (TA =70C) | -3.5 | A | ||
| IDM | Pulsed Drain Current | (TA =25C) | -12 | A | ||
| PD | Power Dissipation | (TA =25C) | 1.38 | W | ||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | C | ||
| Thermal Resistance Ratings | ||||||
| RJA | Maximum Junction-to-Ambient | (Note 3) | 90 | C/W | ||
| Electrical Characteristics (TJ =25C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250A | -1.0 | -3.0 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250A | -30 | V | ||
| gfs | Forward Transconductance | VDS =-5V, ID =-4A | 8.2 | S | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =20V | 100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =25C VDS =-24V, VGS =0V, TJ =55C | -1 -5 | A | ||
| RDS (on) | Static Drain-Source On-Resistance | VGS =-10V, ID =-4.1A VGS =-4.5V, ID =-3.0A | 50 75 | m | ||
| VSD | Diode Forward Voltage | IS =-1.0A, VGS =0V, TJ =25C | -1.2 | V | ||
| IS | Continuous Source Current (Diode) | -4.1 | A | |||
| ISM | Pulsed Source Current (Diode) | VG =VD =0V, Force Current | -8.2 | A | ||
| Dynamic and switching Characteristics | ||||||
| Qg | Total Gate Charge | (Note 2) | 15.2 | nC | ||
| Qgs | Gate-Source Charge | 5.5 | nC | |||
| Qgd | Gate-Drain Charge | VDS =-24V ID =-3A VGS =-10V | 1 | nC | ||
| td(on) | Turn-On Delay Time | (Note 2) | 8.6 | ns | ||
| tr | Rise Time | 12.2 | ns | |||
| td(off) | Turn-Off Delay Time | 36.6 | ns | |||
| tf | Fall Time | VDS =-15V ID =-1A VGS =-10V RG =6, RL =15 | 20.8 | ns | ||
| CISS | Input Capacitance | VDS =-25V VGS =0V f =1.0MHz | 590 | pF | ||
| COSS | Output Capacitance | VDS =-25V VGS =0V f =1.0MHz | 75 | pF | ||
| CRSS | Reverse Transfer Capacitance | VDS =-25V VGS =0V f =1.0MHz | 10 | pF | ||
Notes:
1. Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in copper pad of FR4 board; 270/W when mounted on min. copper pad.
2409291004_Bruckewell-MS34P07_C22374933.pdf
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