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quality SOP 8 Package Dual P Channel MOSFET BLUE ROCKET BR4953D A Suitable for Notebook and Portable Systems factory
quality SOP 8 Package Dual P Channel MOSFET BLUE ROCKET BR4953D A Suitable for Notebook and Portable Systems factory

SOP 8 Package Dual P Channel MOSFET BLUE ROCKET BR4953D A Suitable for Notebook and Portable Systems

Key Attributes
Model Number: BR4953D-A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
84pF
Number:
2 P-Channel
Output Capacitance(Coss):
223pF
Input Capacitance(Ciss):
415pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
BR4953D-A
Package:
SOP-8
Product Description

Product Overview

The BR4953D is a Dual P-Channel MOSFET in a SOP-8 plastic package, featuring a super high-density cell design for low RDS(ON) and enhanced ruggedness and reliability. This device is designed for power management applications in notebook computers, portable equipment, and battery-powered systems.

Product Attributes

  • Brand: FS (implied by fsbrec.com)
  • Package Type: SOP-8 Plastic Package
  • Channel Type: Dual P-Channel MOSFET
  • Marking Code: 4953D

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID * -3.0 A
Pulsed Drain Current IDM* -12 A
Diode Continuous Forward Current IS* -2.0 A
Power Dissipation for Single Operation PD* (Ta=25) 2 W
Power Dissipation for Single Operation PD* (Ta=100) 0.8 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance-Junction to Ambient RJA* 62.5 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250A -20 V
Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V -1 A
Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V, TJ=85 -10 A
Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250A -0.50 -0.8 -1.0 V
Gate Leakage Current IGSS VGS=12V, VDS=0V 100 nA
Drain-Source On-state Resistance RDS(ON) a VGS=-10V, IDS=-2.7A 85 97 m
Drain-Source On-state Resistance RDS(ON) a VGS=-4.5V, IDS=-2.7A 82 110 m
Drain-Source On-state Resistance RDS(ON) a VGS=-2.5V, IDS=-2.2A 130 150 m
Diode Forward Voltage VSD a VGS=0V, ISD=-1.0A -0.7 -1.3 V
Total Gate Charge Qg b VDS=-6V, VGS=-4.5V, IDS=-2.7A 5.8 10 nC
Gate-Source Charge Qgs b 0.85 nC
Gate-Drain Charge Qgd b 1.7 nC
Electrical Characteristics (Ta=25)
Gate Resistance RG b VGS=0V, VDS=0V, F=1MHz 6
Input Capacitance Ciss b VGS=0V, VDS=-6V, Frequency=1.0MHz 415 pF
Output Capacitance Coss b 223 pF
Reverse Transfer Capacitance Crss b 84 pF
Turn-on Delay Time td(ON) b VDD=-6V, RL=6, IDS=-1A, VGEN=-10V, RG=6 13 25 ns
Turn-on Rise Time Tr b 36 60 ns
Turn-off Delay Time Td(OFF) b 42 70 ns
Turn-off Fall Time Tf b 34 60 ns
Packaging & Soldering
Package Dimensions (See Package Dimensions Diagram) mm
Packaging Specification REEL Package Type Units/Reel Reels/Inner Box Units/Inner Box
SOP/ESOP-8 4,000 2 8,000
Reflow Soldering Temperature Profile (Pb-Free) Preheating: 150~180, 60~90sec; Peak Temp.: 2455, 50.5sec; Cooling Speed: 2~10/sec
Resistance to Soldering Heat Test Conditions Temp.: 2605, Time: 101 sec

Notes:
* Surface Mounted on 1in pad area, t 10sec.
a : Pulse test; pulse width 300s, duty cycle 2%.
b : Guaranteed by design, not subject to production testing.


2410121242_BLUE-ROCKET-BR4953D-A_C328565.pdf

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