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quality NPN transistor CBI 2N3904U plastic encapsulated device designed for low current low voltage circuits factory
quality NPN transistor CBI 2N3904U plastic encapsulated device designed for low current low voltage circuits factory

NPN transistor CBI 2N3904U plastic encapsulated device designed for low current low voltage circuits

Key Attributes
Model Number: 2N3904U
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
2N3904U
Package:
SOT-89
Product Description

Product Overview

This NPN transistor, a compliment to the 2N3906, is designed for low current and low voltage applications. It features plastic encapsulation for robust performance.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: NPN Transistor
  • Encapsulation: Plastic
  • Marking: 1A

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current - Continuous IC 0.2 A
Collector Power Dissipation PC 0.5 W
Junction Temperature TJ 150
Storage Temperature Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 6 V
Collector cut-off current ICBO VCB=30V,IE=0 0.05 A
Emitter cut-off current IEBO VEB=6V,IC=0 0.05 A
DC current gain hFE VCE=1V,IC=0.1mA 60
VCE=1V,IC=1mA 80
VCE=1V,IC=10mA 100 300
VCE=1V,IC=50mA 60
VCE=1V,IC=100mA 30
Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.2 V
IC=50mA,IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 0.65 0.85 V
IC=50mA,IB=5mA 0.95 V
Transition frequency fT VCE=20V,IC=10mA,f=100MHz 300 MHz
Collector capacitance Cc VCB=5V,IE=0,f=1MHz 4 pF
Emitter capacitance Ce VEB=0.5V,IC=0,f=1MHz 8 pF
Noise figure NF VCE=5V,Ic=0.1mA,f=10Hz-15.7kHz, RS=1K 5 dB
Delay time td 35 ns
Rise time tr 35 ns
Storage time tS 200 ns
Fall time tf IC=10mA , IB1=-IB2= 1mA 50 ns
Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.05 A

2410121531_CBI-2N3904U_C2928256.pdf

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