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quality General purpose NPN transistor CBI 2N2222AU epitaxial planar die featuring complementary PNP 2N2907A factory
quality General purpose NPN transistor CBI 2N2222AU epitaxial planar die featuring complementary PNP 2N2907A factory

General purpose NPN transistor CBI 2N2222AU epitaxial planar die featuring complementary PNP 2N2907A

Key Attributes
Model Number: 2N2222AU
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2N2222AU
Package:
SOT-89
Product Description

Product Overview

This product is an NPN epitaxial planar transistor designed for general-purpose applications. It features a complementary PNP type (2N2907A) and is available in a SOT-89 package. The transistor offers reliable performance with specific electrical characteristics and maximum ratings suitable for various electronic circuits.

Product Attributes

  • Type: NPN Transistor
  • Construction: Epitaxial planar die
  • Complementary Type: PNP (2N2907A)
  • Package: SOT-89
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Test Conditions Value Unit
MAXIMUM RATINGS
Collector-Base Voltage VCBO (Ta=25 unless otherwise noted) 75 V
Collector-Emitter Voltage VCEO (Ta=25 unless otherwise noted) 40 V
Emitter-Base Voltage VEBO (Ta=25 unless otherwise noted) 6 V
Collector Current -Continuous IC (Ta=25 unless otherwise noted) 600 mA
Collector Power Dissipation PC (Ta=25 unless otherwise noted) 0.5 W
Operation Junction and Storage Temperature Range TJ,Tstg (Ta=25 unless otherwise noted) -55 ~150
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltage V(BR)CBO IC= 10 A,IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=60V, IE=0 0.01 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.01 A
DC current gain hFE(1) VCE=10V, IC= 0.1mA 35
DC current gain hFE(2) VCE=10V, IC= 1mA 50
DC current gain hFE(3) VCE=10V, IC= 10mA 75
DC current gain hFE(4) VCE=10V, IC= 150mA 100 - 300
DC current gain hFE(5) VCE=1V, IC= 150mA 50
DC current gain hFE(6) VCE=10V, IC= 500mA 40
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 1 V
Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 2.0 V
Base-emitter saturation voltage VBE(sat) IC=150mA, IB=15mA 0.6 - 1.2 V
Transition frequency fT VCE=10V, IC=20mA, f=100MHz 300 MHz
Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF
Delay time td VCC=30V, IC=150mA, VBE(off)=0.5V,IB1=15mA 10 ns
Rise time tr VCC=30V, IC=150mA, VBE(off)=0.5V,IB1=15mA 25 ns
Storage time tS VCC=30V, IC=150mA, IB1=15mA 225 ns
Fall time tf VCC=30V, IC=150mA, IB1=- IB2= 15mA 60 ns
SOT-89 Pinout
Pin 1 BASE
Pin 2 COLLECTOR
Pin 3 EMITTER
SOT-89 Package Dimensions (mm)
Symbol Dimension Min Max
A 1.40 1.60
B 2.95 3.05
b1 1.45 1.70
b2 0.45 0.56
b3 0.35 0.50
C 0.35 0.50
D 4.40 4.60
E 2.35 2.55
HE 3.90 4.40
Lp 0.90 1.10

2410121606_CBI-2N2222AU_C21714170.pdf

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