power control transistor BLUE ROCKET BRCS4800SC with 6.9A continuous drain current and N Channel Enhancement Mode design

Key Attributes
Model Number: BRCS4800SC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
858pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
9.6nC@10V
Mfr. Part #:
BRCS4800SC
Package:
SOP-8
Product Description

Product Overview

The BRCS4800SC is a high-performance N-Channel Enhancement Mode Field Effect Transistor designed for power management applications. Encased in a SOP-8 plastic package, this transistor offers a VDS of 30V and a continuous drain current (ID) of 6.9A. It is ideal for use in notebook computers, portable equipment, and battery-powered systems, functioning effectively as a load switch or in Pulse Width Modulation (PWM) applications. Key features include low on-state resistance (RDS(ON)) at various gate-source voltages, making it suitable for efficient power control.

Product Attributes

  • Brand: fsbrec
  • Package Type: SOP-8 Plastic Package
  • Channel Type: N-Channel Enhancement Mode
  • Marking Code: BR 4800 **** (BR: Company Code, 4800: Product Type, ****: Lot No. Code)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current (Ta=25C) ID (Ta=25C) 6.9 A
Continuous Drain Current (Ta=70C) ID (Ta=70C) 5.8 A
Pulsed Drain Current IDM 40 A
Power Dissipation (Ta=25) PD (Ta=25) 2.0 W
Power Dissipation (Ta=70) PD (Ta=70) 1.44 W
Junction and Storage Temperature Range Tj,Tstg -55 +150
Thermal Resistance-Junction to Ambient (t10s) RJA (t10s) 62.5 /W
Thermal Resistance-Junction to Ambient RJA 110 /W
Maximum Junction-to-Lead RJL 40 /W
Drain-Source Breakdown Voltage BVDSS ID=250A, VGS=0V 30 V
Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1.0 A
Zero Gate Voltage Drain Current (TJ=55C) IDSS VDS=24V, VGS=0V, TJ=55C 5.0 A
Gate-Body leakage current IGSS VDS=0V, VGS=12V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 0.7 1.1 1.4 V
On state drain current ID(ON) VGS=4.5V, VDS=5.0V 6.9 A
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=6.9A 24 32 m
Static Drain-Source On-Resistance (TJ=125C) RDS(ON) VGS=10V, ID=6.9A, TJ=125C 32.3 38 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=6.0A 27 36 m
Static Drain-Source On-Resistance RDS(ON) VGS=2.5V, ID=5.0A 40 52 m
Forward Transconductance gFS VDS=5.0V, ID=5.0A 10 15 S
Diode Forward Voltage VSD IS=1.0A 0.77 1.0 V
Maximum Body-Diode Continuous Current IS 3.0 A
Total Gate Charge Qg VGS=4.5V, VDS=15V, ID=6.9A 9.6 nC
Gate-Source Charge Qgs 1.65
Gate-Drain Charge Qg 3.0
Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 1.24
Input Capacitance Ciss VGS=0V, VDS=15V, f=1MHz 858 pF
Output Capacitance Coss 110
Reverse Transfer Capacitance Crss 80
Turn-on Delay Time td(ON) VGS=10V, VDS=15V, RL=2.2, RGEN=6.0 5.7 ns
Turn-on Rise Time tr 13
Turn-off Delay Time td(OFF) 37
Turn-off Fall Time tf 4.2
Body Diode Reverse Recovery Time trr IF=5.0A, dI/dt=100A/s 15.5 ns
Body Diode Reverse Recovery Charge Qrr IF=5.0A, dI/dt=100A/s 7.9 nC

Packaging Specifications

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (Reel) Dimension (Inner Box)
SOP/ESOP-8 4,000 2 8,000 6 48,000 1312 36036050

Soldering Profile

IR Reflow Soldering (Pb-Free):

  • Preheating: 150~180, Time: 60~90 seconds.
  • Peak Temperature: 2455, Duration: 50.5 seconds.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions:

  • Temperature: 2605
  • Time: 101 sec.

2410121252_BLUE-ROCKET-BRCS4800SC_C22449005.pdf

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