dual P Channel MOSFET BLUE ROCKET BRCS4953DMF B for portable and battery powered system power control
Key Attributes
Model Number:
BRCS4953DMF-B
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-
RDS(on):
97mΩ@10V,2.7A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
84pF
Number:
2 P-Channel
Input Capacitance(Ciss):
415pF
Output Capacitance(Coss):
223pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
BRCS4953DMF-B
Package:
SOT-23-6
Product Description
Product Overview
The BRCS4953DMF is a dual P-Channel MOSFET designed for power management applications in notebook computers, portable equipment, and battery-powered systems. It features a super high-density cell design, offering low on-state resistance (RDS(ON)) and robust reliability. Encased in a SOT23-6 plastic package, this device provides efficient performance for demanding power control needs.
Product Attributes
- Brand: FSB
- Package Type: SOT23-6
- Channel Type: Dual P-Channel MOSFET
- Marking Code: 4953D
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID * | -3.0 | A | |||
| Pulsed Drain Current | IDM* | -12 | A | |||
| Diode Continuous Forward Current | IS* | -2.0 | A | |||
| Power Dissipation for Single Operation | PD* (Ta=25) | 1.25 | W | |||
| Power Dissipation for Single Operation | PD* (Ta=100) | 0.5 | W | |||
| Maximum Junction Temperature | Tj | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient | RJA* | 70 | /W | |||
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=-250A | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-16V, VGS=0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-16V, VGS=0V, TJ=85C | -10 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=-250A | -0.50 | -0.8 | -1.0 | V |
| Gate Leakage Current | IGSS | VGS=12V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance | RDS(ON) a | VGS=-10V, IDS=-2.7A | 75 | 97 | m | |
| Drain-Source On-state Resistance | RDS(ON) a | VGS=-4.5V, IDS=-2.7A | 88 | 110 | m | |
| Drain-Source On-state Resistance | RDS(ON) a | VGS=-2.5V, IDS=-2.2A | 120 | 150 | m | |
| Diode Forward Voltage | VSD a | VGS=0V, ISD=-1.0A | -0.7 | -1.3 | V | |
| Total Gate Charge | Qg b | VDS=-6V, VGS=-4.5V, IDS=-2.7A | 5.8 | 10 | nC | |
| Gate-Source Charge | Qgs b | 0.85 | nC | |||
| Gate-Drain Charge | Qgd b | 1.7 | nC | |||
| Electrical Characteristics (Ta=25) | ||||||
| Gate Resistance | RG b | VGS=0V, VDS=0V, F=1MHz | 6 | |||
| Input Capacitance | Ciss b | VGS=0V, VDS=-6V, Frequency=1.0MHz | 415 | pF | ||
| Output Capacitance | Coss b | 223 | pF | |||
| Reverse Transfer Capacitance | Crss b | 84 | pF | |||
| Turn-on Delay Time | td(ON) b | VDD=-6V, RL=6, IDS=-1A, VGEN=-10V, RG=6 | 13 | 25 | ns | |
| Turn-on Rise Time | Tr b | 36 | 60 | ns | ||
| Turn-off Delay Time | Td(OFF) b | 42 | 70 | ns | ||
| Turn-off Fall Time | Tf b | 34 | 60 | ns | ||
Notes:
- a : Pulse test; pulse width 300s, duty cycle 2%.
- b : Guaranteed by design, not subject to production testing.
- * Surface Mounted on 1in pad area, t 10sec.
2410121242_BLUE-ROCKET-BRCS4953DMF-B_C19190005.pdf
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