N Channel MOSFET BORN SI2302 with Trench Process Technology and Low On Resistance in SOT 23 Package
Key Attributes
Model Number:
SI2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF
Number:
1 N-channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
340pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.4nC@4.5V
Mfr. Part #:
SI2302
Package:
SOT-23
Product Description
Product Overview
The SI2302 is an N-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package, making it suitable for various electronic applications requiring efficient power switching. Key electrical characteristics include a drain-source breakdown voltage of 20V and low on-state resistance values of 30m at VGS = 4.5V and 37m at VGS = 2.5V. The device is designed for operation with a continuous drain current of 3A and offers low gate charge and capacitance values.
Product Attributes
- Brand: Not explicitly stated, but associated with www.born-tw.com
- Package Type: SOT-23
- Channel Type: N-Channel
- Technology: Advanced trench process technology, High Density Cell Design
- Marking: A2sHB
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA = 25 | 3 | A | ||
| Pulsed Drain Current | IDM | Pulse width limited by maximum junction temperature | 12 | A | ||
| Maximum Power Dissipation | PD | TA = 25 | 1.25 | W | ||
| Maximum Power Dissipation | PD | TA = 75 | 0.8 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | |||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | (PCB mounted) | 166 | /W | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | (PCB mounted) | 100 | /W | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250uA | 20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | 0.45 | 1.2 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 3A | 30 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 2.5V, ID = 2.5A | 37 | m | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 16V, VGS = 0V | 1 | 10 | uA | |
| Gate Body Leakage | IGSS | VGS = 10V, VDS = 0V | 100 | nA | ||
| Forward Transconductance | gfs | VDS = 5V, ID = 3A | 10 | S | ||
| Total Gate Charge | Qg | VDS = 10V, ID = 3A, VGS = 4.5V | 5.4 | nC | ||
| Gate-Source Charge | Qgs | VDS = 10V, ID = 3A, VGS = 4.5V | 0.65 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 10V, ID = 3A, VGS = 4.5V | 1.6 | nC | ||
| Turn-On Delay Time | td(on) | VDD = 10V, RL=5.5 ID = 3A,VGEN = 4.5V RG = 6 | 12 | ns | ||
| Turn-On Rise Time | tr | VDD = 10V, RL=5.5 ID = 3A,VGEN = 4.5V RG = 6 | 36 | ns | ||
| Turn-Off Delay Time | td(off) | VDD = 10V, RL=5.5 ID = 3A,VGEN = 4.5V RG = 6 | 34 | ns | ||
| Turn-Off Fall Time | tf | VDD = 10V, RL=5.5 ID = 3A,VGEN = 4.5V RG = 6 | 10 | ns | ||
| Input Capacitance | Ciss | VDS = 10V, VGS = 0V f = 1.0 MHz | 340 | pF | ||
| Output Capacitance | Coss | VDS = 10V, VGS = 0V f = 1.0 MHz | 115 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 10V, VGS = 0V f = 1.0 MHz | 33 | pF | ||
| Max. Diode Forward Current | IS | Pulse test: pulse width <= 300us, duty cycle<= 2% | 1.6 | A | ||
| Diode Forward Voltage | VSD | IS = 1.0A, VGS = 0V | 1.5 | V | ||
| Ordering Code | SI2302 | |||||
| Package | SOT-23 | |||||
| Base Quantity | 3K | |||||
| Delivery Mode | Tape and reel |
2411121106_BORN-SI2302_C344009.pdf
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