Darlington Transistor CBI MMBTA64 PNP Silicon Epitaxial Planar Transistor Suitable for Various Circuits

Key Attributes
Model Number: MMBTA64
Product Custom Attributes
Mfr. Part #:
MMBTA64
Package:
SOT-23
Product Description

Product Overview

This product is a PNP Silicon Epitaxial Planar Transistor designed for general-purpose applications. It functions as a Darlington transistor, offering high DC current gain. Available in a SOT-23 plastic package, it is suitable for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23 Plastic Package
  • Transistor Type: PNP Silicon Epitaxial Planar Transistor, Darlington Transistor

Technical Specifications

Parameter Symbol Model Min. Max. Unit Conditions
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage -VCBO 30 V
Collector Emitter Voltage -VCEO 30 V
Emitter Base Voltage -VEBO 10 V
Collector Current -IC 500 mA
Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range TS -55 +150 C
Characteristics (Ta = 25 C)
DC Current Gain hFE MMBTA63 5000 - -VCE = 5 V, -IC = 10 mA
MMBTA64 10000 - -VCE = 5 V, -IC = 10 mA
MMBTA63 10000 - -VCE = 5 V, -IC = 100 mA
MMBTA64 20000 - -VCE = 5 V, -IC = 100 mA
Collector Cutoff Current -ICBO - 100 nA -VCB = 30 V
Emitter Cutoff Current -IEBO - 100 nA -VEB = 10 V
Collector Emitter Breakdown Voltage -V(BR)CEO 30 - V -IC = 100 A
Collector Emitter Saturation Voltage -VCE(sat) - 1.5 V -IC = 100 mA, -IB = 0.1 mA
Base Emitter On Voltage -VBE(on) - 2 V -VCE = 5 V, -IC = 100 mA
Transition Frequency fT 125 - MHz -VCE = 5 V, IE = 10 mA
Marking
MMBTA63 2U
MMBTA64 2V

2510101615_CBI-MMBTA64_C51315434.pdf

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