Switching N Channel MOSFET BLUE ROCKET BRFL12N60 in TO 220FL Package for Half Bridge Topology Circuits

Key Attributes
Model Number: BRFL12N60
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 N-channel
Output Capacitance(Coss):
235pF
Input Capacitance(Ciss):
2.29nF
Pd - Power Dissipation:
51W
Gate Charge(Qg):
63nC@400V
Mfr. Part #:
BRFL12N60
Package:
TO-220FL
Product Description

Product Overview

The BRFL12N60 is an N-channel MOSFET in a TO-220FL plastic package. It features low gate charge, low feedback capacitance, and fast switching speeds, making it well-suited for high-efficiency switched-mode power supplies, active power factor correction circuits, and electronic lamp ballasts based on half-bridge topology.

Product Attributes

  • Brand: FS (implied by datasheet URL and marking)
  • Product Type: N-Channel MOSFET
  • Package Type: TO-220FL Plastic Package
  • Marking Code: BR 12N60
  • Origin: China (implied by datasheet language and company code)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 600 V
Drain Current (Tc=25) ID(Tc=25) 12 A
Drain Current (Tc=100) ID(Tc=100) 7.4 A
Drain Current - Pulsed IDM 48 A
Gate-Source Voltage VGSS 20 V
Single Pulsed Avalanche Energy EAS 870 mJ
Repetitive Avalanche Energy EAR 22.5 mJ
Avalanche Current IAR 12 A
Power Dissipation (Tc=25) PD(Tc=25) 51 W
Operating and Storage Temperature Range TJ,TSTG -55 150
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 600 V
Breakdown Voltage Temperature Coefficient BVDSS / TJ ID = 250A 0.5 V/C
Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V 1 A
IDSS VDS=480V, TC=125 100 A
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 2 4 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=6A 0.53 0.65
Forward Transconductance gFS VDS=40V, ID=6A 13 S
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=12A 1.4 V
Electrical Characteristics (Ta=25)
Input Capacitance Ciss VDS=25V, VGS=0V, f=1MHz 1760 2290 pF
Output Capacitance Coss VDS=25V, VGS=0V, f=1MHz 182 235 pF
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1MHz 21 28 pF
Turn-On Delay Time td(on) VDD=300V, ID=12A, RG=25 30 70 ns
Turn-On Rise Time tr VDD=300V, ID=12A, RG=25 85 180 ns
Turn-Off Delay Time td(off) VDD=300V, ID=12A, RG=25 140 280 ns
Turn-Off Fall Time tf VDD=300V, ID=12A, RG=25 90 190 ns
Total Gate Charge Qg VDS = 400V, ID = 12A, VGS = 10V 48 63 nC
Gate-Source Charge Qgs VDS = 400V, ID = 12A, VGS = 10V 8.5 nC
Gate-Drain Charge Qg VDS = 400V, ID = 12A, VGS = 10V 21 nC
Maximum Continuous Drain-Source Diode Forward Current IS 12 A
Maximum Pulsed Drain-Source Diode Forward Current ISM 48 A
Reverse Recovery Time trr VGS = 0V, IS = 12A, dIF/dt =100A/s 420 ns
Reverse Recovery Charge Qrr VGS = 0V, IS = 12A, dIF/dt =100A/s 4.9 uC

Package Dimensions

Refer to the provided Package Dimensions diagram for detailed measurements.

Packaging Specifications

Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (unit: mm)
TO-220FL (Tube) 50 20 1,000 5 5,000 532337.0

Temperature Profile for Dip Soldering (Pb-Free)

  • Preheating: 25~150, Time: 60~90 sec.
  • Peak Temp.: 2555, Duration: 50.5 sec.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

  • Temperature: 2705
  • Time: 101 sec.

2410121238_BLUE-ROCKET-BRFL12N60_C358404.pdf

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