High voltage power switching device BLUE ROCKET BRU20N50 N channel MOSFET with TO 3P plastic package
Key Attributes
Model Number:
BRU20N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
260mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Output Capacitance(Coss):
400pF
Input Capacitance(Ciss):
2.7nF
Pd - Power Dissipation:
280W
Gate Charge(Qg):
70nC
Mfr. Part #:
BRU20N50
Package:
TO-3P
Product Description
Product Overview
The BRU20N50 is an N-channel MOSFET in a TO-3P plastic package, designed for high voltage, high-speed power switching applications. It features low gate charge, fast switching capability, high avalanche energy, and improved dv/dt capability, making it suitable for high efficiency switched mode power supplies and active power factor correction. This device offers a continuous drain current of 20A at 25 and 13A at 100, with a drain-to-source breakdown voltage of 500V.
Product Attributes
- Brand: FS (fsbrec.com)
- Package Type: TO-3P Plastic Package
- Transistor Type: N-Channel MOSFET
- Marking Code: BR 20N50 **** (BR: Company Code, 20N50: Product Type, ****: Lot No. Code)
Technical Specifications
| Parameter | Symbol | Rating Unit | Value |
|---|---|---|---|
| Drain-to-Source Breakdown Voltage | VDSS | V | 500 |
| Continuous Drain Current (Tc=25) | ID(Tc=25) | A | 20 |
| Continuous Drain Current (Tc=100) | ID(Tc=100) | A | 13 |
| Drain Current Pulsed | IDP | A | 80 |
| Gate-to-Source Voltage | VGSS | V | 30 |
| Repetitive Avalanche Energy | EAR | mJ | 28 |
| Single Pulse Avalanche Energy | EAS | mJ | 1110 |
| Peak Diode Recovery dv/dt | dv/dt | V/ns | 4.5 |
| Power Dissipation (Tc=25) | PD(Tc=25) | W | 280 |
| Junction Temperature Range | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 | |
| Thermal Resistance Junction-Ambient | RJA | /W | 40 |
| Thermal Resistance Junction-Case | RJC | /W | 0.44 |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | VDSS | VGS=0V, ID=250A | 500 | V | ||
| Drain-to-Source Leakage Current | IDSS | VDS=500V, VGS=0V | 1.0 | A | ||
| Drain-to-Source Leakage Current | IDSS | VDS=400V, TC=125 | 10 | A | ||
| Gate-to-Source Forward Leakage | IGSS | VGS=30V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 5.0 | V | |
| Static Drain-to-Source On-Resistance | RDS(on) | VGS=10V, ID=10A | 0.21 | 0.26 | ||
| Diode Forward Voltage | VSD | VGS=0V, ISD=20A | 1.5 | V | ||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 2700 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | 400 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | 40 | pF | ||
| Turn-On Delay Time | td(on) | VDD=250V, ID=20A, RG=2.5 | 100 | ns | ||
| Rise Time | tr | VDD=250V, ID=20A, RG=2.5 | 400 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=250V, ID=20A, RG=2.5 | 100 | ns | ||
| Fall Time | tf | VDD=250V, ID=20A, RG=2.5 | 100 | ns | ||
| Total Gate Charge | Qg | VDS=400V, ID=20A, VGS=10V | 70 | nC | ||
| Gate-Source Charge | Qgs | VDS=400V, ID=20A, VGS=10V | 18 | nC | ||
| Gate-Drain Charge | Qgd | VDS=400V, ID=20A, VGS=10V | 35 | nC |
Packaging Specifications
| Package Type | Units/Tube | Tubes/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Inner Box Dimensions (mm) | Outer Box Dimensions (mm) |
|---|---|---|---|---|---|---|---|
| TO-3P (Tube) | 30 | 15 | 450 | 5 | 2250 | 55516450 | 575290180 |
2410121242_BLUE-ROCKET-BRU20N50_C328553.pdf
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