Compact SOT 23 P Channel MOSFET BORN BML6401 with Ultra Low On Resistance and Fast Switching Features
Key Attributes
Model Number:
BML6401
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@2.5V,2.5A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
830pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
-
Mfr. Part #:
BML6401
Package:
SOT-23
Product Description
Product Overview
The BML6401 is a P-Channel MOSFET designed for applications requiring ultra-low on-resistance and fast switching capabilities. This ROHS-compliant component is packaged in a SOT-23, making it suitable for space-constrained designs. Key features include high forward transconductance and efficient power dissipation, making it a reliable choice for various electronic circuits.
Product Attributes
- Brand: BML
- Product Type: P-Channel MOSFET
- Package: SOT-23
- Compliance: ROHS
- Marking: 6401
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | ||||||
| Drain-Source Voltage | VDS | - | - | - | -12 | V |
| Gate-Source Voltage | VGS | - | - | - | 8 | V |
| Continuous Drain Current | ID | VGS=4.5V @ TA=25 | - | - | -4.3 | A |
| Pulsed Drain Current | IDM | a | - | - | -13 | A |
| Power Dissipation @ TA=25 | PD | - | - | - | 1.3 | W |
| Thermal Resistance, Junction-to-Ambient | RthJA | - | - | 100 | - | /W |
| Linear Derating Factor | - | - | 0.01 | - | - | W/ |
| Junction Temperature | TJ | - | - | - | 150 | |
| Junction and Storage Temperature Range | Tstg | - | -55 | - | 150 | |
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | ||||||
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -12 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-12V, VGS=0V | - | - | -1 | A |
| - | - | VDS=-9.6V, VGS=0V, TJ= 55 | - | - | -25 | A |
| Gate-Body leakage current | IGSS | VDS=0V, VGS=8V | - | 100 | - | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS ID=-250A | -0.4 | -0.95 | - | V |
| Forward Transconductance | gFS | VDS=-10V, ID=-4.3A | 8.6 | - | - | S |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-4.3A | - | 50 | - | m |
| - | - | VGS=-2.5V, ID=-2.5A | - | 85 | - | m |
| - | - | VGS=-1.8V, ID=-2A | - | 125 | - | m |
| Input Capacitance | Ciss | VGS=0V, VDS=-10V, f=1MHz | - | 830 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=-10V, f=1MHz | - | 180 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-10V, f=1MHz | - | 125 | - | pF |
| Turn-On DelayTime | td(on) | ID=-1.0A, VDS=-6.0V, RGEN=6 | - | 11 | - | ns |
| Turn-Off DelayTime | td(off) | ID=-1.0A, VDS=-6.0V, RGEN=6 | - | 250 | - | ns |
| Body Diode Reverse Recovery Time | trr | IF=-1.3A, dI/dt=-100A/s | - | 22 | 33 | ns |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 1.3 | A |
| Diode Forward Voltage | VSD | IS=-1.3A,VGS=0V | - | -1.2 | - | V |
2410121610_BORN-BML6401_C920320.pdf
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