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quality 60V Drain Source Voltage MOSFET BLUE ROCKET BRCS4828SC with 4.5A Continuous Current in SOP 8 Package factory
quality 60V Drain Source Voltage MOSFET BLUE ROCKET BRCS4828SC with 4.5A Continuous Current in SOP 8 Package factory

60V Drain Source Voltage MOSFET BLUE ROCKET BRCS4828SC with 4.5A Continuous Current in SOP 8 Package

Key Attributes
Model Number: BRCS4828SC
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Output Capacitance(Coss):
76pF
Input Capacitance(Ciss):
665pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
10.5nC@10V
Mfr. Part #:
BRCS4828SC
Package:
SOP-8
Product Description

Product Overview

The BRCS4828SC is an N-Channel Enhancement Double Mode Field Effect Transistor designed for use in a SOP-8 plastic package. Manufactured using advanced trench technology, it offers excellent RDS(ON) characteristics and very low gate charge. This device is suitable for applications such as load switches and Pulse Width Modulation (PWM). It features a Drain-Source Voltage (VDS) of 60V and a continuous drain current (ID) of 4.5A at VGS = 10V, with a low on-resistance of less than 50m at VGS = 10V.

Product Attributes

  • Brand: FS (implied by URL http://www.fsbrec.com)
  • Package Type: SOP-8 Plastic Package
  • Technology: Advanced Trench Technology

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Ta=25C) IDA,F 4.5 A
Continuous Drain Current (Ta=70C) IDA,F 3.6 A
Pulsed Drain Current IDMB 20 A
Power Dissipation for Single Operation (Ta=25) PDA 2 W
Power Dissipation for Single Operation (Ta=70) PDA 1.28 W
Avalanche Current IARB 19 A
Repetitive avalanche energy EARB 18 mJ
Junction and Storage Temperature Range Tj, Tstg -55 +150
Thermal Characteristics
Maximum Junction-to-Ambient (t 10s) RJAA 48 62.5 /W
Maximum Junction-to-Ambient (Steady-State) RJAA 74 110 /W
Maximum Junction-to-Case (Steady-State) RJC 35 60 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS ID=250A, VGS=0V 60 V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 A
Zero Gate Voltage Drain Current (TJ=55C) IDSS VDS=60V, VGS=0V 5 A
Gate-Body leakage current IGSS VDS=0V, VGS=20V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.0 1.6 3.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=4.5A 45 50 m
Static Drain-Source On-Resistance (TJ=125C) RDS(ON) VGS=10V, ID=4.5A 79 100 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=3A 55 65 m
Forward Transconductance gFS VDS=5V, ID=4.5A 8.0 S
Diode Forward Voltage VSD IS=1A, VGS=0V 0.74 1 V
Maximum Body-Diode Continuous Current IS 3 A
Pulsed Body Diode Current ISMB 20 A
Dynamic Parameters
Input Capacitance Ciss VGS=0V, f=1MHz 665 pF
Output Capacitance Coss VGS=0V, f=1MHz 76 pF
Reverse Transfer Capacitance Crss VGS=0V, f=1MHz 20 pF
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 2.2
Switching Parameters
Total Gate Charge (10V) Qg(10V) VGS=10V, VDS=30V, ID=4.5A 8.5 10.5 nC
Total Gate Charge (4.5V) Qg(4.5V) VGS=4.5V, VDS=30V, ID=3A 4.3 5.5 nC
Gate-Source Charge Qgs VGS=10V, VDS=30V, ID=4.5A 1.6 nC
Gate-Drain Charge Qgd VGS=10V, VDS=30V, ID=4.5A 2.2 nC
Turn-on Delay Time td(ON) VGS=10V, VDS=30V, RL=6.7, RGEN=3 4.7 ns
Turn-on Rise Time tr VGS=10V, VDS=30V, RL=6.7, RGEN=3 2.3 ns
Turn-off Delay Time td(OFF) VGS=10V, VDS=30V, RL=6.7, RGEN=3 15.7 ns
Turn-off Fall Time tf VGS=10V, VDS=30V, RL=6.7, RGEN=3 1.9 ns
Body Diode Reverse Recovery Time trr IF=4.5A, dI/dt=100A/ms 27.5 35 ns
Body Diode Reverse Recovery Charge Qrr IF=4.5A, dI/dt=100A/ms 32 nC

Note: Refer to the datasheet for detailed explanations of symbols, test conditions, and abbreviations like A, B, C, D, E, F.


2410121924_BLUE-ROCKET-BRCS4828SC_C22449008.pdf

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