power switch N Channel MOSFET BORN BMF7N65 with 7A continuous drain current and UL 94V 0 molded plastic
Key Attributes
Model Number:
BMF7N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
1.21Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.3pF
Input Capacitance(Ciss):
1.13nF
Pd - Power Dissipation:
36W
Output Capacitance(Coss):
92pF
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
BMF7N65
Package:
TO-220F
Product Description
Product Overview
The BMx7N65 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed for power switch circuits in adaptors and chargers, this MOSFET offers a drain-source voltage (VDSS) of 650V and a continuous drain current (ID) of 7A. It features fast switching capabilities and low gate charge, contributing to efficient power conversion. The device is constructed with molded plastic meeting UL Flammability Classification Rating 94V-0 and is compliant with the EU RoHS 2011/65/EU directive.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Product Type: N-Channel MOSFET
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Compliance: EU RoHS 2011/65/EU directive
- Lead Finish: Lead-free
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) @VGS=10V (, Typ.) | Power Dissipation (W) | RJC (C/W) | RJA (C/W) | Ordering Information (Base Qty) |
|---|---|---|---|---|---|---|---|---|
| BMx7N65 | TO-220AB | 650 | 7 | 1.21 | 100 | 1.25 | 62.5 | 50pcs/tube, 1kpcs/box, 5kpcs/carton |
| BMx7N65 | TO-220F | 650 | 7 | 1.21 | 36 | 3.46 | 62.5 | 50pcs/tube, 1kpcs/box, 5kpcs/carton |
| BMx7N65 | TO-263 | 650 | 7 | 1.21 | 108 | 1.16 | 100 | 50pcs/tube, 1kpcs/box, 5kpcs/carton |
| BMx7N65-R | TO-263 | 650 | 7 | 1.21 | 108 | 1.16 | 100 | 800pcs/reel, 800pcs/box, 4kpcs/carton |
| BMx7N65 | TO-252 | 650 | 7 | 1.21 | 108 | 1.16 | 100 | 2500pcs/reel, 5kpcs/box, 25kpcs/carton |
| Electrical Characteristics (@TA=25C unless otherwise noted) | ||||||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) | 650 V | ||||||
| IDSS | Zero Gate Voltage Drain Current (VDS=650V, VGS=0V) | 1 A | ||||||
| IGSS | Gate-Source Leakage Current (VGS=30V, VDS=0V) | 100 nA | ||||||
| VGS(TH) | Gate Threshold Voltage (VGS=VDS, ID=250uA) | 2 4 V | ||||||
| RDS(on) | Static Drain-source On Resistance (VGS=10V, ID=3.5A) | 1.21 1.45 | ||||||
| gfs | Forward Transconductance (VDS=15V, ID=7A) | 6.5 S | ||||||
| Ciss | Input capacitance (VDS=25V, VGS=0V, f=1MHz) | 1130 pF | ||||||
| Coss | Output capacitance | 92 pF | ||||||
| Crss | Reverse transfer capacitance | 5.3 pF | ||||||
| Td(on) | Turn-on delay time (Note1) | 18 ns | ||||||
| Tr | Turn-on Rise time (Note1) | 19 ns | ||||||
| Td(off) | Turn-Off Delay Time (Note1) | 39 ns | ||||||
| Tf | Turn-Off Fall time (Note1) | 18 ns | ||||||
| Qgs | Gate to Source Charge (Note1) | 5 nC | ||||||
| Qgd | Gate to Drain Charge (Note1) | 9 nC | ||||||
| Qg | Total Gate Charge (Note1) | 23 nC | ||||||
| VSD | Diode Forward Voltage (ISD=7A) | 1.4 V | ||||||
| IS | Diode Forward Current | 7 A | ||||||
| ISM | Diode Pulsed Current | 28 A | ||||||
| Trr | Reverse Recovery Time (Note1) | 420 ns | ||||||
| Qrr | Reverse Recovery Charge (Note1) | 1.9 C | ||||||
Note1: Pulse test: 300 s pulse width, 2% duty cycle.
Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
2506201720_BORN-BMF7N65_C49009910.pdf
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