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quality N channel MOSFET BLUE ROCKET BRCS045N08SHBD designed for Boost Converters and Synchronous Rectifiers factory
quality N channel MOSFET BLUE ROCKET BRCS045N08SHBD designed for Boost Converters and Synchronous Rectifiers factory

N channel MOSFET BLUE ROCKET BRCS045N08SHBD designed for Boost Converters and Synchronous Rectifiers

Key Attributes
Model Number: BRCS045N08SHBD
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
155A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@6V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
1 N-channel
Output Capacitance(Coss):
2.55nF
Input Capacitance(Ciss):
4.24nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
73nC@10V
Mfr. Part #:
BRCS045N08SHBD
Package:
TO-263
Product Description

Product Overview

The BRCS045N08SHBD is an N-channel MOSFET in a TO-263 plastic package, designed for high-performance applications. It features a Drain-Source Voltage (VDS) of 80V and a continuous Drain Current (ID) of 155A at 25. This HF product is suitable for use in boost converters and synchronous rectifiers for consumer, telecom, and industrial power supplies, as well as LED backlighting. Key electrical characteristics include a low Static Drain-Source On-Resistance (RDS(on)) of 4.5m at 10V (typical 3.5m) and 9.0m at 6V (typical 4.7m). The device is RoHS compliant (Halogen-Free Product).

Product Attributes

  • Brand: fsbrec
  • Package Type: TO-263 Plastic Package
  • Channel Type: N-channel MOSFET
  • Product Type Code: 045N08SH
  • Halogen-Free: Yes

Technical Specifications

Parameter Symbol Rating/Test Conditions Value Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 80 V
Drain Current ID(Tc=25) 155 A
Pulsed Drain Current IDM 322 A
Gate-Source Voltage VGS 20 V
Single Pulsed Avalanche Energy (L=0.5mH) EAS 986 mJ
Avalanche Current IAS 43 A
Total Power Dissipation PD(Tc=25) 200 W
Junction and Storage Temperature Range TJ,TSTG -55 to 150
Thermal Resistance-Junction to Ambient Steady-State RJA 62.5 /W
Thermal Resistance-Junction to Case Steady-State RJC 0.63 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 80 (Min) / 92.5 (Typ) V
Zero Gate Voltage Drain Current IDSS VDS=80V, VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 2 (Min) / 3 (Typ) / 4 (Max) V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 3.5 (Typ) / 4.5 (Max) m
Static Drain-Source On-Resistance RDS(on) VGS=6V, ID=10A 4.7 (Typ) / 9.0 (Max) m
Forward On Voltage VSD VGS=0V, IS=1A 1.4 V
Gate resistance Rg f=1MHz 1
Input Capacitance Ciss VDS=25V, VGS=0V, f=1MHz 4240 pF
Output Capacitance Coss VDS=25V, VGS=0V, f=1MHz 2550 pF
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1MHz 150 pF
Total Gate Charge Qg VGS=10V, VDS=40V, ID=20A 73 nC
Gate Source Charge Qgs VGS=10V, VDS=40V, ID=20A 19.2 nC
Gate Drain Charge Qgd VGS=10V, VDS=40V, ID=20A 12 nC
Turn-On Delay Time td(on) VGS=10V, VDS=40V, RL=2, RGEN=3 19 ns
Turn-On Rise Time tr VGS=10V, VDS=40V, RL=2, RGEN=3 12.5 ns
Turn-Off Delay Time td(off) VGS=10V, VDS=40V, RL=2, RGEN=3 40 ns
Turn-Off Fall Time tf VGS=10V, VDS=40V, RL=2, RGEN=3 8 ns

2410121231_BLUE-ROCKET-BRCS045N08SHBD_C22449029.pdf

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