Compact SOT 323 N Channel MOSFET BORN 2N7002KW Offering High ESD Tolerance and Switching Performance

Key Attributes
Model Number: 2N7002KW
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.2pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
18.5pF@30V
Pd - Power Dissipation:
510mW
Gate Charge(Qg):
500pC@10V
Mfr. Part #:
2N7002KW
Package:
SOT-323
Product Description

Product Overview

The 2N7002KW is an N-Channel MOSFET designed with a super high dense cell structure for extremely low RDS(ON). It offers reliable and rugged performance, packaged in a SOT-323 surface mount package. This MOSFET features an ESD rating of >2000V HBM, making it suitable for applications requiring robust electrostatic discharge protection.

Product Attributes

  • Brand: Not explicitly stated, but associated with www.born-tw.com
  • Package Type: SOT-323
  • Channel Type: N-Channel
  • ESD Rating: >2000V HBM

Technical Specifications

Parameter Symbol Condition Typical Maximum Unit
Absolute Maximum Ratings
Drain-source voltage VDS @TA=25 unless otherwise noted - 60 V
Gate-source voltage VGS @TA=25 unless otherwise noted - ±20 V
Continuous Drain Current (TJ = 150 °C) ID TC=25°C - 0.30 A
Continuous Drain Current (TJ = 150 °C) ID TC=70°C - 0.26 A
Continuous Drain Current (TJ = 150 °C) ID TA=25°C - 0.34b,c A
Continuous Drain Current (TJ = 150 °C) ID TA=70°C - 0.27b,c A
Continuous Source-Drain Diode Current IS TC=25°C - 0.43 A
Continuous Source-Drain Diode Current IS TA=25°C - 0.25b,c A
Pulsed Drain Current (t = 300 µs) IDM - - 0.65 A
Maximum power dissipation PD TC=25°C - 0.51 W
Maximum power dissipation PD TC=70°C - 0.33 W
Maximum power dissipation PD TA=25°C - 0.30b,c W
Maximum power dissipation PD TA=70°C - 0.20b,c W
Operating Junction and Storage Temperature Range TJ, TSTG - -55 150 °C
Electrical Characteristics
Drain-source breakdown voltage BVDSS VGS=0V, ID=-250µA 60 - V
Zero gate voltage drain current IDSS VDS=60V, VGS=0V - 1 µA
Gate-body leakage IGSS VDS=0V, VGS=±20V - ±10 µA
Gate threshold voltage VGS(th) VDS=VGS, ID=250µA 1 1.3 2.5 V
Drain-source on-state resistance RDS(ON) VGS=10V, ID=0.30A - 2.3 Ω
Drain-source on-state resistance RDS(ON) VGS=4.5V, ID=0.20A - 3 Ω
Forward transconductance gfs VDS=30V, ID=0.2A - 159 mS
Input capacitance CISS VDS=30V ,VGS=0V f=1.0MHz - 18.5 pF
Output capacitance COSS - - 7.5 pF
Reverse transfer capacitance CRSS - - 4.2 pF
Turn-on delay time tD(ON) VDD=30V ID=0.3A VGEN=10V RL=100Ω RGEN=1Ω - 6.5 ns
Rise time tr - - 12 ns
Turn-off delay time tD(OFF) - - 13 ns
Fall time tf - - 14 ns
Total gate charge Qg VDS=30V,ID=0.30A VGS=4.5V - 0.5 nC
Gate-source charge Qgs - - 0.2 -
Gate-drain charge Qgd - - 0.15 -
Diode forward voltage VSD VGS=0V,IS=0.3A - 1.2 V
Thermal Characteristics
Maximum Junction-to-Ambient RθJA t ≤5 s 360 415 °C/W
Maximum Junction-to-Foot (Drain) Steady State RθJF - 300 350 °C/W
Package Information
Package Type - - - SOT-323 -
Dimensions (mm) Symbol Min Nor Max -
- A 0.90 1.00 1.10 -
- A1 0.00 0.05 0.10 -
- A2 0.90 0.95 1.00 -
- b 0.20 0.30 0.40 -
- c 0.08 0.12 0.15 -
- D 2.00 2.10 2.20 -
- E 2.15 2.30 2.45 -
- E1 1.15 1.25 1.35 -
- e - 0.650TPY. - -
- e1 1.2 1.3 1.4 -
- L 0.26 0.36 0.46 -
- θ -
Ordering Information
Order Code Package Base qty Delivery mode Marking -
2N7002KW SOT-323 3K Tape and reel 72K -

2410010101_BORN-2N7002KW_C2847214.pdf
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