Compact SOT 323 N Channel MOSFET BORN 2N7002KW Offering High ESD Tolerance and Switching Performance
Product Overview
The 2N7002KW is an N-Channel MOSFET designed with a super high dense cell structure for extremely low RDS(ON). It offers reliable and rugged performance, packaged in a SOT-323 surface mount package. This MOSFET features an ESD rating of >2000V HBM, making it suitable for applications requiring robust electrostatic discharge protection.
Product Attributes
- Brand: Not explicitly stated, but associated with www.born-tw.com
- Package Type: SOT-323
- Channel Type: N-Channel
- ESD Rating: >2000V HBM
Technical Specifications
| Parameter | Symbol | Condition | Typical | Maximum | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-source voltage | VDS | @TA=25 unless otherwise noted | - | 60 | V |
| Gate-source voltage | VGS | @TA=25 unless otherwise noted | - | ±20 | V |
| Continuous Drain Current (TJ = 150 °C) | ID | TC=25°C | - | 0.30 | A |
| Continuous Drain Current (TJ = 150 °C) | ID | TC=70°C | - | 0.26 | A |
| Continuous Drain Current (TJ = 150 °C) | ID | TA=25°C | - | 0.34b,c | A |
| Continuous Drain Current (TJ = 150 °C) | ID | TA=70°C | - | 0.27b,c | A |
| Continuous Source-Drain Diode Current | IS | TC=25°C | - | 0.43 | A |
| Continuous Source-Drain Diode Current | IS | TA=25°C | - | 0.25b,c | A |
| Pulsed Drain Current (t = 300 µs) | IDM | - | - | 0.65 | A |
| Maximum power dissipation | PD | TC=25°C | - | 0.51 | W |
| Maximum power dissipation | PD | TC=70°C | - | 0.33 | W |
| Maximum power dissipation | PD | TA=25°C | - | 0.30b,c | W |
| Maximum power dissipation | PD | TA=70°C | - | 0.20b,c | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | - | -55 | 150 | °C |
| Electrical Characteristics | |||||
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID=-250µA | 60 | - | V |
| Zero gate voltage drain current | IDSS | VDS=60V, VGS=0V | - | 1 | µA |
| Gate-body leakage | IGSS | VDS=0V, VGS=±20V | - | ±10 | µA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250µA | 1 | 1.3 | 2.5 V |
| Drain-source on-state resistance | RDS(ON) | VGS=10V, ID=0.30A | - | 2.3 | Ω |
| Drain-source on-state resistance | RDS(ON) | VGS=4.5V, ID=0.20A | - | 3 | Ω |
| Forward transconductance | gfs | VDS=30V, ID=0.2A | - | 159 | mS |
| Input capacitance | CISS | VDS=30V ,VGS=0V f=1.0MHz | - | 18.5 | pF |
| Output capacitance | COSS | - | - | 7.5 | pF |
| Reverse transfer capacitance | CRSS | - | - | 4.2 | pF |
| Turn-on delay time | tD(ON) | VDD=30V ID=0.3A VGEN=10V RL=100Ω RGEN=1Ω | - | 6.5 | ns |
| Rise time | tr | - | - | 12 | ns |
| Turn-off delay time | tD(OFF) | - | - | 13 | ns |
| Fall time | tf | - | - | 14 | ns |
| Total gate charge | Qg | VDS=30V,ID=0.30A VGS=4.5V | - | 0.5 | nC |
| Gate-source charge | Qgs | - | - | 0.2 | - |
| Gate-drain charge | Qgd | - | - | 0.15 | - |
| Diode forward voltage | VSD | VGS=0V,IS=0.3A | - | 1.2 | V |
| Thermal Characteristics | |||||
| Maximum Junction-to-Ambient | RθJA | t ≤5 s | 360 | 415 | °C/W |
| Maximum Junction-to-Foot (Drain) Steady State | RθJF | - | 300 | 350 | °C/W |
| Package Information | |||||
| Package Type | - | - | - | SOT-323 | - |
| Dimensions (mm) | Symbol | Min | Nor | Max | - |
| - | A | 0.90 | 1.00 | 1.10 | - |
| - | A1 | 0.00 | 0.05 | 0.10 | - |
| - | A2 | 0.90 | 0.95 | 1.00 | - |
| - | b | 0.20 | 0.30 | 0.40 | - |
| - | c | 0.08 | 0.12 | 0.15 | - |
| - | D | 2.00 | 2.10 | 2.20 | - |
| - | E | 2.15 | 2.30 | 2.45 | - |
| - | E1 | 1.15 | 1.25 | 1.35 | - |
| - | e | - | 0.650TPY. | - | - |
| - | e1 | 1.2 | 1.3 | 1.4 | - |
| - | L | 0.26 | 0.36 | 0.46 | - |
| - | θ | 0° | 4° | 8° | - |
| Ordering Information | |||||
| Order Code | Package | Base qty | Delivery mode | Marking | - |
| 2N7002KW | SOT-323 | 3K | Tape and reel | 72K | - |
2410010101_BORN-2N7002KW_C2847214.pdf
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