Audio Frequency Amplifier and Low Speed Switching Transistor CBI 2SB772PU PNP Silicon Epitaxial Type
Key Attributes
Model Number:
2SB772PU
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
10W
Transition Frequency(fT):
80MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
2SB772PU
Package:
SOT-89
Product Description
Product Overview
The 2SB772U is a PNP Silicon Epitaxial Power Transistor designed for audio frequency power amplifier and low-speed switching applications. It offers reliable performance in demanding electronic circuits.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Epitaxial
- Color: Not specified
- Package: SOT-89
- Marking: B772
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Collector Base Voltage | -VCBO | 40 | V | |||
| Collector Emitter Voltage | -VCEO | 30 | V | |||
| Emitter Base Voltage | -VEBO | 5 | V | |||
| Collector Current | -IC | 3 | A | |||
| Peak Collector Current | -ICP | 7 | A | (t = 10 ms) | ||
| Base Current | -IB | 0.6 | A | |||
| Total Power Dissipation @ Ta = 25 OC | PD | 1 | W | |||
| Total Power Dissipation @ Tc = 25 OC | PD | 10 | W | |||
| Operating and Storage Junction Temperature Range | Tj , Tstg | -65 | 150 | OC | ||
| DC Current Gain (Group R) | hFE | 30 | 120 | - | @ -VCE = 2 V, -IC = 20 mA | |
| DC Current Gain (Group Q) | hFE | 60 | 200 | - | @ -VCE = 2 V, -IC = 20 mA | |
| DC Current Gain (Group P) | hFE | 100 | 320 | - | @ -VCE = 2 V, -IC = 20 mA | |
| DC Current Gain (Group E) | hFE | 160 | 400 | - | @ -VCE = 2 V, -IC = 20 mA | |
| DC Current Gain (Group) | hFE | 200 | - | - | @ -VCE = 2 V, -IC = 1 A | |
| Collector Base Cutoff Current | -ICBO | 1 | A | @ -VCB = 30 V | ||
| Emitter Base Cutoff Current | -IEBO | - | - | @ -VEB = 3 V | ||
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 | - | V | @ -IC = 1 mA | |
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 30 | - | V | @ -IC = 1 mA | |
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 | - | V | @ -IE = 1 mA | |
| Collector Emitter Saturation Voltage | -VCE(sat) | 0.5 | V | @ -IC = 2 A, -IB = 200 mA | ||
| Base Emitter Saturation Voltage | -VBE(sat) | 2 | V | @ -IC = 2 A, -IB = 200 mA | ||
| Current Gain Bandwidth Product | fT | 80 | - | MHz | @ -VCE = 5 V, -IC = 100 mA | |
| Output Capacitance | Cob | 55 | - | pF | @ -VCB = 10 V, f = 1 MHz |
2409271703_CBI-2SB772PU_C2828479.pdf
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