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quality Power Switch N Channel MOSFET BLUE ROCKET BRD4N70 Featuring Low Gate Charge and Fast Switching Speeds factory
quality Power Switch N Channel MOSFET BLUE ROCKET BRD4N70 Featuring Low Gate Charge and Fast Switching Speeds factory

Power Switch N Channel MOSFET BLUE ROCKET BRD4N70 Featuring Low Gate Charge and Fast Switching Speeds

Key Attributes
Model Number: BRD4N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Number:
1 N-channel
Input Capacitance(Ciss):
520pF
Pd - Power Dissipation:
70W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
BRD4N70
Package:
TO-252
Product Description

Product Overview

The BRD4N70 is an N-channel MOSFET in a TO-252 plastic package, designed for power switch circuits in adapters and chargers. It features low gate charge, low feedback capacitance, and fast switching speeds, making it well-suited for these applications.

Product Attributes

  • Brand: FS (implied by datasheet URL)
  • Package Type: TO-252
  • Channel Type: N-Channel

Technical Specifications

Parameter Symbol Rating Unit Test Conditions Min Typ Max
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDS 700 V
Drain Current ID(Tc=25) 4.0 A
Drain Current ID(Tc=100) 3.2 A
Drain Current - Pulsed IDM 16 A
Gate-Source Voltage VGS ±30 V
Single Pulsed Avalanche Energy EAS 150 mJ
Power Dissipation PD 70 W
Junction Temperature Range Tj -55 150
Storage Temperature Range Tstg -55 150
Junction-to-Case RJC 1.79 °C/W
Junction-to-Ambient RJA 62.5 °C/W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS 700 V VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient ΔBVDSS /ΔTj 0.6 V/°C ID=250uA, Referenced to 25°C
Gate Threshold Voltage VGS(th) V VGS=VDS, ID=250µA 2.0 4.0
Zero Gate Voltage Drain Current IDSS µA VDS=700V, VGS=0V, Tj=25 10
Zero Gate Voltage Drain Current IDSS µA VDS=560V, VGS=0V, Tj=125 100
Forward Transconductance gFS 3.5 S VDS=15V, ID=2.0A
Gate-Body Leakage Current Forward IGSS ±10 µA VGS=±30V
Static Drain-Source On-Resistance RDS(on) Ω VGS=10V, ID=2.0A 2.5 2.8
Input Capacitance Ciss 520 pF VGS =0V, VDS=25V, f=1.0MHZ
Turn-Off Delay Time td(off) 45 ns VDD=350V, ID=4.0A, RG=25Ω
Electrical Characteristics (Ta=25)
Total Gate Charge Qg 15 nC ID=4.0A, VDS=350V, VGS=10V
Gate-to-Source Charge Qgs 3 nC
Gate-to-Drain Charge Qgd 6 nC
Continuous Diode Forward Current IS 4.0 A
Diode Forward Voltage VSD 1.4 V Is=4.0A, VGS=0V, Tj=25
Reverse Recovery Time trr 198 nS If=4.0A, Tj=25, di/dt=100A/µs
Reverse Recovery Charge Qrr 770 µC

Notes:
Repetitive rating: Pulse width limited by maximum junction temperature.
Starting Tj=25, VDD=50V, L=30mH, RG=25Ω, IAS=4.0A.
Pulse Test: Pulse width≤300µs, Duty cycle≤ 2%.

Package Dimensions: TO-252

Marking Code: BR **** 4N70 (BR: Company Code, 4N70: Product Type, ****: Lot No. Code)

Soldering Temperature Profile (Lead-Free):
Preheating Temp.: 25~150, Duration: 60~90 sec;
Peak Temp.: 245±5, Duration: 5±0.5 sec;
Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Temperature: 260±5, Time: 10±1 sec.

Packaging:
- Reel Packaging: 2,500 Units/Reel
- Tube Packaging: 75 Units/Tube


2410121242_BLUE-ROCKET-BRD4N70_C358399.pdf

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