SOT23 Package PNP Silicon Transistor CBI BC858B for Switching and Amplifier in Electronic Applications

Name: SOT23 Package PNP Silicon Transistor CBI BC858B for Switching and Amplifier in Electronic Applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BC858B
Availability: InStock

Key Attributes

Model Number: BC858B

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

15nA

Pd - Power Dissipation:

200mW

Transition Frequency(fT):

100MHz

Type:

PNP

Current - Collector(Ic):

200mA

Collector - Emitter Voltage VCEO:

30V

Mfr. Part #:

BC858B

Package:

SOT-23

Product Description

Product Overview

This document details the PNP Silicon Epitaxial Transistor, suitable for switching and amplifier applications. It is housed in a SOT-23 plastic package. The transistors are available in various models, each with specific voltage and current ratings, designed for reliable performance in electronic circuits.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23 Plastic Package

Technical Specifications

Absolute Maximum Ratings (Ta = 25 C)

Parameter	Symbol	BC856	BC857, BC860	BC858, BC859	Unit
Collector Base Voltage	-VCBO	80	50	30	V
Collector Emitter Voltage	-VCEO	65	45	30	V
Emitter Base Voltage	-VEBO	5			V
Collector Current	-IC	100			mA
Peak Collector Current	-ICM	200			mA
Power Dissipation	Ptot	200			mW
Junction Temperature	Tj	150			C
Storage Temperature Range	Tstg	-65 to +150			C

Characteristics at Ta = 25 C

Parameter	Symbol	Group	Min.	Max.	Unit
DC Current Gain at -VCE = 5 V, -IC = 2 mA	hFE	A	110	220	-
		B	200	450	-
		C	420	800	-
Collector Base Cutoff Current at -VCB = 30 V	-ICBO	- 15			nA
Collector Base Breakdown Voltage at -IC = 10 A	-V(BR)CBO	BC856	80	-	V
		BC857, BC860	50	-	V
		BC858, BC859	30	-	V
Collector Emitter Breakdown Voltage at -IC = 10 A	-V(BR)CES	BC856	80	-	V
		BC857, BC860	50	-	V
		BC858, BC859	30	-	V
Collector Emitter Breakdown Voltage at -IC = 10 mA	-V(BR)CEO	BC856	65	-	V
		BC857, BC860	45	-	V
		BC858, BC859	30	-	V
Emitter Base Breakdown Voltage at -IE = 1 A	-V(BR)EBO	5			V
Collector Emitter Saturation Voltage	-VCE(sat)	at -IC = 10 mA, -IB = 0.5 mA	-	0.3	V
Collector Emitter Saturation Voltage	-VCE(sat)	at -IC = 100 mA, -IB = 5 mA	-	0.65	V
Base Emitter On Voltage at -VCE = 5 V	-VBE(on)	at -IC = 2 mA	0.6	-	V
Base Emitter On Voltage at -VCE = 5 V	-VBE(on)	at -IC = 10 mA	0.75	0.82	V
Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz	fT	100			MHz
Output Capacitance at -VCB = 10 V, f = 1 MHz	Cob	- 6			pF
Noise Figure at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 1 KHz	NF	BC856, BC857, BC858	-	4	dB
	NF	BC859, BC860	-	4	dB
Noise Figure at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 30 ~15 KHz	NF	BC859	-	2	dB
	NF	BC860	-	2	dB

MARKING CODE

TYPE	MARKING	TYPE	MARKING
856A	3A	859B	4A
856B	3B	859C	4B
856C	3C	860A	4C
857A	3E	860B	4E
857B	3F	860C	4F
857C	3G
858A	3J
858B	3K
858C	3L

PACKAGE OUTLINE SOT-23

Symbol	Min	Max
A	0.90	1.10
A1	0.013	0.100
B	1.80	2.00
bp	0.35	0.50
C	0.09	0.150
D	2.80	3.00
E	1.20	1.40
HE	2.20	2.80
Lp	0.20	0.50
	0	5

2410121636_CBI-BC858B_C21714252.pdf

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