Low On Resistance N Channel MOSFET BORN SI2310A with 3A Drain Current and 60V Voltage SOT 23 Package

Key Attributes
Model Number: SI2310A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
80mΩ@10V;90mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Output Capacitance(Coss):
34pF
Input Capacitance(Ciss):
247pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
5.1nC@10V
Mfr. Part #:
SI2310A
Package:
SOT-23
Product Description

Product Overview

The SI2310A is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Engineered with advanced trench process technology and a high-density cell design, it offers ultra-low on-resistance. This MOSFET is suitable for surface mount applications, packaged in a SOT-23 form factor. It features a drain-source voltage of 60V and a continuous drain current of 3A, with typical on-resistance values of 80m at VGS=10V and 90m at VGS=4.5V.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Product Type: N-Channel MOSFET
  • Package: SOT-23
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
VDS Drain-Source Voltage 60 V
ID Continuous Drain Current 3 A
RDS(ON) Drain-Source On-State Resistance VGS(V)=10V 80 105 m
RDS(ON) Drain-Source On-State Resistance VGS(V)=4.5V 90 125 m
Absolute Maximum Ratings (@TA=25C unless otherwise noted)
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage 20 V
ID Continuous Drain Current 3 A
IDM Pulsed drain current 10 A
PD Power dissipation 350 mW
RJA Thermal Resistance from Junction to Ambient 357 C/W
TJ Operating Junction Temperature 150 C
Tstg Storage Temperature Range -55 +150 C
Electrical Characteristics (@TA=25C unless otherwise noted)
V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 60 V
IDSS Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V 1 uA
IGSS Gate Body Leakage Current VGS = 20V, VDS = 0V 0.1 uA
VGS(th) Gate Threshold Voltage VDS =VGS, ID = 250uA 0.8 1.5 2 V
RDS(on) Drain-Source On-State Resistance(1) VGS = 10V, ID = 3A 80 105 m
RDS(on) Drain-Source On-State Resistance(1) VGS=4.5V, ID =3A 90 125 m
Dynamic Characteristics(2)
Ciss Input Capacitance VGS=0V,VDS=30V,f=1MHz 247 pF
Coss Output Capacitance 34 pF
Crss Reverse Transfer Capacitance 22 pF
td(on) Turn-On Delay Time VDD=30V,ID=1.5A, VGEN=10V,RGEN=1 6 nS
tr Turn-On Rise Time 15
td(off) Turn-Off Delay Time 15
tf Turn-Off Fall Time 10
Qg Total gate charge VGS=10V,VDS=30V, ID=3A 5.1 nC
Qgs Gate-source charge 1.3
Qgd Gate-drain charge 1.7
Source-Drain Diode Characteristics
IS Diode forward Current(1) 3 A
VDS Diode forward voltage VGS=0V, Is = 3A 0.85 1.25 V
Ordering Information
Order code Package Marking Base qty Delivery mode
SI2310A SOT-23 2310 3K Tape and reel
Outline Drawing - SOT-23 Packaging
SYMBOL MILLIMETER
A0 2.100.10
A1 3.100.10
B0 0.650.10
B1 2.750.10
d0 1.550.10
d1 1.000.05
E 1.750.10
F 3.500.10
K0 1.100.10
P 4.000.10
P0 4.000.10
P1 2.000.10
W 8.000.30
T 0.20 0.05
Packaging Tape - SOT-23
SYMBOL MILLIMETER
A 177.80.2
B 3.1
C 13.50
D 9.60.3
E 750.2
F 12.30.3
T1 1.00.2
Quantity 3000PCS
SOT-23 Package Dimensions
SYMBOL MIN. Typ. MAX.
A 0.90 1.00 1.10
A1 0.01 0.10
A2 0.50 0.60 0.70
D 2.80 2.90 3.00
b 0.25 0.35 0.45
E 2.10 2.30 2.50
E1 1.20 1.30 1.40
e 1.80 1.90 2.00
L 0.25 0.35 0.45
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