Low On Resistance N Channel MOSFET BORN SI2310A with 3A Drain Current and 60V Voltage SOT 23 Package
Product Overview
The SI2310A is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Engineered with advanced trench process technology and a high-density cell design, it offers ultra-low on-resistance. This MOSFET is suitable for surface mount applications, packaged in a SOT-23 form factor. It features a drain-source voltage of 60V and a continuous drain current of 3A, with typical on-resistance values of 80m at VGS=10V and 90m at VGS=4.5V.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Product Type: N-Channel MOSFET
- Package: SOT-23
- Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| ID | Continuous Drain Current | 3 | A | |||
| RDS(ON) | Drain-Source On-State Resistance | VGS(V)=10V | 80 | 105 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS(V)=4.5V | 90 | 125 | m | |
| Absolute Maximum Ratings (@TA=25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | 3 | A | |||
| IDM | Pulsed drain current | 10 | A | |||
| PD | Power dissipation | 350 | mW | |||
| RJA | Thermal Resistance from Junction to Ambient | 357 | C/W | |||
| TJ | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Electrical Characteristics (@TA=25C unless otherwise noted) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250uA | 60 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 60V, VGS = 0V | 1 | uA | ||
| IGSS | Gate Body Leakage Current | VGS = 20V, VDS = 0V | 0.1 | uA | ||
| VGS(th) | Gate Threshold Voltage | VDS =VGS, ID = 250uA | 0.8 | 1.5 | 2 | V |
| RDS(on) | Drain-Source On-State Resistance(1) | VGS = 10V, ID = 3A | 80 | 105 | m | |
| RDS(on) | Drain-Source On-State Resistance(1) | VGS=4.5V, ID =3A | 90 | 125 | m | |
| Dynamic Characteristics(2) | ||||||
| Ciss | Input Capacitance | VGS=0V,VDS=30V,f=1MHz | 247 | pF | ||
| Coss | Output Capacitance | 34 | pF | |||
| Crss | Reverse Transfer Capacitance | 22 | pF | |||
| td(on) | Turn-On Delay Time | VDD=30V,ID=1.5A, VGEN=10V,RGEN=1 | 6 | nS | ||
| tr | Turn-On Rise Time | 15 | ||||
| td(off) | Turn-Off Delay Time | 15 | ||||
| tf | Turn-Off Fall Time | 10 | ||||
| Qg | Total gate charge | VGS=10V,VDS=30V, ID=3A | 5.1 | nC | ||
| Qgs | Gate-source charge | 1.3 | ||||
| Qgd | Gate-drain charge | 1.7 | ||||
| Source-Drain Diode Characteristics | ||||||
| IS | Diode forward Current(1) | 3 | A | |||
| VDS | Diode forward voltage | VGS=0V, Is = 3A | 0.85 | 1.25 | V | |
| Ordering Information | ||||||
| Order code | Package | Marking | Base qty | Delivery mode | ||
| SI2310A | SOT-23 | 2310 | 3K | Tape and reel | ||
| Outline Drawing - SOT-23 Packaging | ||||||
| SYMBOL | MILLIMETER | |||||
| A0 | 2.100.10 | |||||
| A1 | 3.100.10 | |||||
| B0 | 0.650.10 | |||||
| B1 | 2.750.10 | |||||
| d0 | 1.550.10 | |||||
| d1 | 1.000.05 | |||||
| E | 1.750.10 | |||||
| F | 3.500.10 | |||||
| K0 | 1.100.10 | |||||
| P | 4.000.10 | |||||
| P0 | 4.000.10 | |||||
| P1 | 2.000.10 | |||||
| W | 8.000.30 | |||||
| T | 0.20 0.05 | |||||
| Packaging Tape - SOT-23 | ||||||
| SYMBOL | MILLIMETER | |||||
| A | 177.80.2 | |||||
| B | 3.1 | |||||
| C | 13.50 | |||||
| D | 9.60.3 | |||||
| E | 750.2 | |||||
| F | 12.30.3 | |||||
| T1 | 1.00.2 | |||||
| Quantity | 3000PCS | |||||
| SOT-23 Package Dimensions | ||||||
| SYMBOL | MIN. | Typ. | MAX. | |||
| A | 0.90 | 1.00 | 1.10 | |||
| A1 | 0.01 | 0.10 | ||||
| A2 | 0.50 | 0.60 | 0.70 | |||
| D | 2.80 | 2.90 | 3.00 | |||
| b | 0.25 | 0.35 | 0.45 | |||
| E | 2.10 | 2.30 | 2.50 | |||
| E1 | 1.20 | 1.30 | 1.40 | |||
| e | 1.80 | 1.90 | 2.00 | |||
| L | 0.25 | 0.35 | 0.45 | |||
| 0 | 8 | |||||
2508151650_BORN-SI2310A_C50338756.pdf
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