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quality N plus P channel enhancement mode MOSFET BORN BMI403NP1136 with low on resistance and fast switching factory
quality N plus P channel enhancement mode MOSFET BORN BMI403NP1136 with low on resistance and fast switching factory

N plus P channel enhancement mode MOSFET BORN BMI403NP1136 with low on resistance and fast switching

Key Attributes
Model Number: BMI403NP1136
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-
RDS(on):
50mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
105pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
950pF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
BMI403NP1136
Package:
TO-252-4L
Product Description

Product Overview

The BMI403NP1136 is a high-performance N+P-Channel MOSFET designed for various electronic applications. It features enhancement mode operation, very low on-resistance, and fast switching capabilities. This device is Pb-free and RoHS compliant, ensuring environmental responsibility. It is available in a TO-252-4L package.

Product Attributes

  • Brand: BMI
  • Channel Type: N+P-Channel
  • Mode: Enhancement
  • Lead Plating: Pb-free
  • Compliance: RoHS compliant
  • Package: TO-252-4L

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Typical N-Channel Units P-Channel Conditions P-Channel Typical P-Channel Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID=250uA 30 V VGS = 0V, ID=-250uA -30 V
Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS=0V 1 uA VDS = -30V, VGS=0V -1 uA
Gate-Body Leakage Current IGSS VGS = 20V, VDS=0V 100 nA VGS = 20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(TH) VGS = VDS, ID=250uA 1.6 V VGS = VDS, ID=-250uA -1.5 V
Static Drain-source On Resistance RDS(ON) VGS=10V, ID=8A 10 m VGS=-10V, ID=-6A 24 m
Static Drain-source On Resistance RDS(ON) VGS=4.5V, ID=6A 13 m VGS=-4.5V, ID=-5A 40 m
Input capacitance Ciss VDS =25V, VGS =0V, f = 1MHz 880 pF VDS =-25V, VGS =0V, f = 1MHz 950 pF
Output capacitance Coss 110 pF 115 pF
Reverse transfer capacitance Crss 95 pF 105 pF
Gate to Drain Charge Qg VDS=15V, VGS=10V, ID=10A 18 nC VDS=-15V, VGS=-10V, ID=-5A 18 nC
Gate to Source Charge Qgs 3.8 nC 5 nC
Gate to Drain Charge Qgd 4.5 nC 4.2 nC
Turn-on delay time Td(on) VDD=15V, VGS=10V, RG =3.3, ID=3.5A 7 nS VDD=-15V, VGS=-10V, RG =3.3, ID=-5A 11 nS
Turn-on Rise time Tr 14 nS 39 nS
Turn -Off Delay Time Td(off) 22 nS 26 nS
Turn -Off Fall time Tf 8 nS 30 nS
Diode Forward Voltage VSD VGS=0V,ISD=10A 0.83 V VGS=0V,ISD=-6A -0.85 V
Reverse Recovery Time Trr ISD=10A,VGS=0V 13 nS ISD=-5A,VGS=0V 31 nS
Reverse Recovery Charge Qrr di/dt=-500A/s,TJ=25C 11 nC di/dt=2000A/s,TJ=25C 19 nC
Storage Temperature TJ,Tstg -55 to +150 C -55 to +150 C
Continuous Drain Current ID TC=25C 30 A TC=25C -22 A
Continuous Drain Current ID TC=100C 19 A TC=100C -14 A
Pulse Drain Current IDM TC=25C 120 A TC=25C -88 A
Power dissipation for Dual Operation PD TC=25C 25 W TC=25C 25 W
Thermal Resistance From Junction to Case RJC 6 C/W 6 C/W
Thermal Resistance from Junction to Ambient RJA 45 C/W 45 C/W
Avalanche Energy, Single Pulsed EAS 56(3) mJ 72(4) mJ

2411191600_BORN-BMI403NP1136_C42387580.pdf

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