Low noise amplifier transistor CBI MMBTSC3356-3G NPN silicon epitaxial planar type with SOT23 package

Key Attributes
Model Number: MMBTSC3356-3G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
3GHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-
Mfr. Part #:
MMBTSC3356-3G
Package:
SOT-23
Product Description

Product Overview

The 1 MMBTSC3356 is an NPN silicon epitaxial planar transistor designed for low-noise amplifier applications in the VHF, UHF, and CATV bands. It is available in three DC current gain groups (Q, R, and S) and comes in a SOT-23 plastic package.

Product Attributes

  • Package Type: SOT-23 Plastic Package
  • Transistor Type: NPN Silicon Epitaxial Planar

Technical Specifications

Parameter Symbol Value Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 20 V
Collector Emitter Voltage VCEO 12 V
Emitter Base Voltage VEBO 3 V
Collector Current IC 100 mA
Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range TS -65 to +150 C
Characteristics (Ta = 25 C)
DC Current Gain at VCE = 10 V, IC = 20 mA (Group Q) hFE 50 - 100 -
DC Current Gain at VCE = 10 V, IC = 20 mA (Group R) hFE 80 - 160 -
DC Current Gain at VCE = 10 V, IC = 20 mA (Group S) hFE 125 - 250 -
Collector Cutoff Current at VCB = 10 V ICBO - 1 A
Emitter Cutoff Current at VEB = 1 V IEBO - 1 A
Gain Bandwidth Product at VCE = 10 V, IC = 20 mA fT 3 GHz
Feed-Back Capacitance at VCB = 10 V, f = 1 MHz Cre 0.55 1 pF
Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz NF 1.1 2 dB
HFE MARKING GROUP
Q Q
R23 R
R R
R24 R
S S
R25 S
PACKAGE OUTLINE DESCRIPTION
SOT-23 Plastic surface mounted package; 3 leads

2410010403_CBI-MMBTSC3356-3G_C2928246.pdf

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