Lead Free N Channel Enhancement Mode Transistor BLUE ROCKET BRCS120N06YB for Switching Applications

Key Attributes
Model Number: BRCS120N06YB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
24A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
1.01nF
Pd - Power Dissipation:
24W
Gate Charge(Qg):
13.5nC@10V
Mfr. Part #:
BRCS120N06YB
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The BRCS120N06YB is an N-Channel Enhancement Mode Field Effect Transistor designed for high-efficiency switching DC/DC converters and switch-mode power supplies. This transistor is housed in a PDFN 3x3A-8L plastic package and is a lead-free product. It offers a Drain-Source Voltage of 60V and a continuous Drain Current of 24A (at VGS = 20V), with a low on-resistance of 13m (Typ. 11.5m) at 10V.

Product Attributes

  • Brand: Fsbrec
  • Product Type: N-Channel Enhancement Mode Field Effect Transistor
  • Package Type: PDFN 3x3A-8L Plastic Package
  • Material: Lead-Free Product ()
  • Marking: BR (Company Code), 120N06 (Product Type Code), **** (Lot No. Code)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 60 V
Drain Current (Tc=25) ID(Tc=25) 24 A
Drain Current - Pulsed IDM 90 A
Gate-Source Voltage VGSS 20 V
Single Pulsed Avalanche Energy EAS 70 mJ
Avalanche Current IAS 20 A
Power Dissipation (Tc=25) PD(Tc=25) 24 W
Operating and Storage Temperature Range TJ,Tstg -55 150
Junction-to-Ambient Thermal Resistance (t10s) RJA 30 /W
Junction-to-Ambient Thermal Resistance (Steady-State) RJA 55 /W
Junction-to-Case Thermal Resistance (Steady-State) RJC 5.2 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 60 64 V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 0.1 A
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.0 1.6 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 11.5 13 m
Static Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=10A 15.5 18 m
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=1A 1.2 V
Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz 1010 pF
Output Capacitance Coss VGS=0V, VDS=0V, f=1MHz 250 pF
Reverse Transfer Capacitance Crss VGS=0V, VDS=0V, f=1MHz 280 pF
Gate resistance Rg 1.5
Total Gate Charge (10V) Qg(10V) VGS=10V, VDS=30V, ID=13A 13.5 nC
Total Gate Charge (4.5V) Qg(4.5V) VGS=4.5V, VDS=30V, ID=13A 6.5 nC
Gate Source Charge Qgs 2.5 nC
Gate Drain Charge Qgd 3.0 nC
Turn-On Delay Time td(on) VGS=10V, VDS=30V, RL=2.3, RGEN=3 5 ns
Turn-On Rise Time tr VGS=10V, VDS=30V, RL=2.3, RGEN=3 3 ns
Turn-Off Delay Time td(off) VGS=10V, VDS=30V, RL=2.3, RGEN=3 19 ns
Turn-Off Fall Time tf VGS=10V, VDS=30V, RL=2.3, RGEN=3 3 ns

2410121231_BLUE-ROCKET-BRCS120N06YB_C22448989.pdf

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