High Density Cell Design N Channel MOSFET BORN BM100N02 with 100V Drain Source Voltage and SOT 23 Package
Key Attributes
Model Number:
BM100N02
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
RDS(on):
230mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Input Capacitance(Ciss):
326pF
Pd - Power Dissipation:
1.25W
Output Capacitance(Coss):
38pF
Mfr. Part #:
BM100N02
Package:
SOT-23
Product Description
Product Overview
The BM100N02 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Engineered with advanced trench process technology and a high-density cell design for ultra-low on-resistance, this MOSFET is suitable for surface mount applications. It offers a drain-source voltage of 100V and a continuous drain current of 2A, with typical on-resistance values of 230m at VGS=10V and 240m at VGS=4.5V. The SOT-23 package makes it ideal for space-constrained designs.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Model: BM100N02
- Channel Type: N-Channel MOSFET
- Package: SOT-23
- Technology: Advanced trench process technology
- Cell Design: High Density Cell Design For Ultra Low On-Resistance
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| ID | Continuous Drain Current | 2 | A | |||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=2A | 230 | 290 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=2A | 240 | 330 | m | |
| Absolute Maximum Ratings (@TA=25C unless otherwise noted) | ||||||
| BVDSS | Drain-Source Voltage | VGS = 0V, ID = 250uA | 100 | V | ||
| VGS | Gate-Source Voltage | 20 | 20 | V | ||
| ID | Continuous Drain Current | TA = 25C | 2 | A | ||
| IDM | Pulsed Drain Current | 8 | A | |||
| PD | Maximum Power Dissipation | TA = 25C | 1.25 | W | ||
| TJ | Junction Temperature Range | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | 150 | C | ||
| Electrical Characteristics (@TA=25C unless otherwise noted) | ||||||
| BVDS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250uA | 100 | V | ||
| RDS(on) | Drain-Source On-State Resistance (1) | VGS = 10V, ID = 2A | 230 | 290 | m | |
| RDS(on) | Drain-Source On-State Resistance (1) | VGS = 4.5V, ID = 2A | 240 | 330 | m | |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250uA | 1.0 | 1.6 | 2.5 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 100V, VGS = 0V | 1 | uA | ||
| IGSS | Gate Body Leakage | VGS = 20V, VDS = 0V | 100 | nA | ||
| Dynamic Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 50V, RGEN = 6, ID = 2A | 10 | ns | ||
| td(off) | Turn-Off Delay Time | VDS = 50V, RGEN = 6, ID = 2A | 30 | ns | ||
| Ciss | Input Capacitance | VDS = 15V, VGS = 10V, f=1MHz | 326 | pF | ||
| Coss | Output Capacitance | VDS = 15V, VGS = 10V, f=1MHz | 38 | pF | ||
| Source-Drain Diode | ||||||
| VSD | Diode Forward Voltage | IS = 2.0A, VGS = 0V | 1.2 | V | ||
| Dimensions (SOT-23) | ||||||
| A | 0.90 | 1.00 | 1.10 | mm | ||
| A1 | 0.01 | 0.10 | mm | |||
| A2 | 0.50 | 0.60 | 0.70 | mm | ||
| D | 2.80 | 2.90 | 3.00 | mm | ||
| b | 0.25 | 0.35 | 0.45 | mm | ||
| E | 2.10 | 2.30 | 2.50 | mm | ||
| E1 | 1.20 | 1.30 | 1.40 | mm | ||
| e | 1.80 | 1.90 | 2.00 | mm | ||
| L | 0.25 | 0.35 | 0.45 | mm | ||
| 0 | 8 | |||||
| Packaging (Tape - SOT-23) | ||||||
| A0 | 2.100.10 | mm | ||||
| A1 | 3.100.10 | mm | ||||
| B0 | 0.650.10 | mm | ||||
| B1 | 2.750.10 | mm | ||||
| d0 | 1.550.10 | mm | ||||
| d1 | 1.000.05 | mm | ||||
| E | 1.750.10 | mm | ||||
| F | 3.500.10 | mm | ||||
| K0 | 1.100.10 | mm | ||||
| P | 4.000.10 | mm | ||||
| P0 | 4.000.10 | mm | ||||
| P1 | 2.000.10 | mm | ||||
| W | 8.000.30 | mm | ||||
| T | 0.20 0.05 | mm | ||||
| Packaging (Reel) | ||||||
| A | 177.80.2 | mm | ||||
| B | 3.1 | mm | ||||
| C | 13.50 | mm | ||||
| D | 9.60.3 | mm | ||||
| E | 750.2 | mm | ||||
| F | 12.30.3 | mm | ||||
| T1 | 1.00.2 | mm | ||||
| Quantity | 3000 | PCS | ||||
Note: Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
2505301710_BORN-BM100N02_C49009907.pdf
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