Power management solution BORN BM2300 N Channel MOSFET with RoHS compliance and SOT 23 compact package
Key Attributes
Model Number:
BM2300
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@4.5V,3.6A
Gate Threshold Voltage (Vgs(th)):
760mV
Reverse Transfer Capacitance (Crss@Vds):
33pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
340pF@10V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.4nC@4.5V
Mfr. Part #:
BM2300
Package:
SOT-23
Product Description
Product Overview
The BM2300 is an N-Channel MOSFET featuring advanced trench process technology and high-density cell design for ultra-low on-resistance. It is designed for efficient power management applications and is RoHS compliant, packaged in a SOT-23. This MOSFET offers excellent electrical characteristics and thermal performance, making it suitable for various electronic circuits requiring low power loss and high switching speeds.
Product Attributes
- Brand: BOR-TW
- Product Type: N-Channel MOSFET
- Package: SOT-23
- Compliance: ROHS
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | 3.6 | A | TA = 25oC | ||
| Pulsed Drain Current 1) | IDM | 8 | A | |||
| Maximum Power Dissipation 2) | PD | 1.25 | 0.8 | W | TA = 25oC / TA = 75oC | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) 2) | RθJA | 78 | °C/W | |||
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | ||||||
| Static Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250uA | ||
| Drain-Source On-State Resistance | RDS(on) | 70.0 | 80.0 | mΩ | VGS = 2.5V, ID = 3.1A | |
| Drain-Source On-State Resistance | RDS(on) | 60.0 | 70.0 | mΩ | VGS = 4.5V, ID = 3.6A | |
| Gate Threshold Voltage | VGS(th) | 0.6 | 0.76 | V | VDS =VGS, ID = 250uA | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20V, VGS = 0V | ||
| Gate Body Leakage | IGSS | ±100 | nA | VGS = ±12V, VDS = 0V | ||
| Forward Transconductance | gfs | 5 | S | VDS = 5V, ID = 4.2A | ||
| Dynamic 4) | ||||||
| Total Gate Charge | Qg | 5.4 | nC | VDS = 10V, ID = 3.6A, VGS = 4.5V | ||
| Gate-Source Charge | Qgs | 0.65 | nC | |||
| Gate-Drain Charge | Qgd | 1.5 | nC | |||
| Turn-On Delay Time | td(on) | 12 | ns | VDD = 10V, RG = 6Ω, ID = 1A, VGS = 4.5V | ||
| Turn-On Rise Time | tr | 36 | ns | |||
| Turn-Off Delay Time | td(off) | 34 | ns | |||
| Turn-Off Fall Time | tf | 10 | ns | |||
| Input Capacitance | Ciss | 340 | pF | VDS = 10V, VGS = 0V, f = 1.0 MHz | ||
| Output Capacitance | Coss | 115 | pF | |||
| Reverse Transfer Capacitance | Crss | 33 | pF | |||
| Source-Drain Diode | ||||||
| Max. Diode Forward Current | IS | 1.6 | A | |||
| Diode Forward Voltage | VSD | 1.0 | V | IS = 1.0A, VGS = 0V | ||
Notes:
- 1) Pulse width limited by maximum junction temperature.
- 2) Surface Mounted on FR4 Board, t ≤ 5 sec.
- 3) Short duration test pulse used to minimize self-heating effect.
- 4) Pulse test pulse width =300us, duty cycle = 2%.
2410121855_BORN-BM2300_C920321.pdf
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