Trench DMOS Technology N Channel MOSFET Bruckewell MSP100N045SA 100 Volt 120 Amp Drain Source Voltage
Key Attributes
Model Number:
MSP100N045SA
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-50℃~+150℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
609pF
Input Capacitance(Ciss):
4.725nF
Pd - Power Dissipation:
250W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
MSP100N045SA
Package:
TO-220
Product Description
Product Overview
The MSP100N045SA is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-resistance (RDS(ON)), deliver superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications, including motor drivers, load switches, synchronous rectifiers, and Battery Management Systems (BMS).
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Package Type: TO-220
Technical Specifications
| Parameter | Value | Units |
|---|---|---|
| Model | MSP100N045SA | - |
| Channel Type | N-Channel | - |
| Drain-Source Voltage (VDS) | 100 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (TC =25°C) | 120 | A |
| Continuous Drain Current (TC =100°C) | 100 | A |
| Pulsed Drain Current (IDM) | 480 | A |
| Single Pulse Avalanche Current (IAS, L =0.5mH) | 53 | A |
| Single Pulse Avalanche Energy (EAS, L =0.5mH) | 702 | mJ |
| Power Dissipation (PD, TC =25°C) | 250 | W |
| Power Dissipation (PD, TA =25°C) | 2 | W |
| Operating Junction and Storage Temperature | -50 to +150 | °C |
| RDS(ON) @ VGS =10V, ID =30A | Typ. 3.7, Max. 4.5 | mΩ |
| Gate Threshold Voltage (VGS(th)) @ VDS =VGS, ID =250μA | Typ. 3, Max. 4 | V |
| Drain-Source Breakdown Voltage (BVDSS) @ VGS =0V, ID =250μA | 100 | V |
| Forward Transconductance (gfs) @ VDS =5V, ID =30A | Typ. 50 | S |
| Gate-Source Leakage Current (IGSS) @ VDS =0V, VGS =±20V | Max. ±100 | nA |
| Drain-Source Leakage Current (IDSS) @ VDS =100V, VGS =0V, TJ =25°C | Max. 1 | μA |
| Drain-Source Leakage Current (IDSS) @ VDS =100V, VGS =0V, TJ =125°C | Max. 10 | μA |
| Diode Forward Voltage (VSD) @ IS =50A, VGS =0V, TJ =25°C | Max. 1.3 | V |
| Continuous Source Current (IS) | 120 | A |
| Pulsed Source Current (ISM) | 240 | A |
| Total Gate Charge (Qg) @ VDS =50V, ID =20A, VGS =10V | Typ. 72 | nC |
| Gate-Source Charge (Qgs) | Typ. 28 | nC |
| Gate-Drain Charge (Qgd) | Typ. 15 | nC |
| Turn-On Delay Time (td(on)) @ VDD =50V, ID =20A, VGS =10V, RG =3.0Ω | Typ. 35 | ns |
| Rise Time (tr) | Typ. 18 | ns |
| Turn-Off Delay Time (td(off)) | Typ. 45 | ns |
| Fall Time (tf) | Typ. 55 | ns |
| Input Capacitance (CISS) @ VDS =50V, VGS =0V, f =1.0MHz | Typ. 4725 | pF |
| Output Capacitance (COSS) | Typ. 609 | pF |
| Reverse Transfer Capacitance (CRSS) | Typ. 14 | pF |
| Gate Resistance (Rg) @ VGS =VDS =0V, f =1.0MHz | Typ. 1 | Ω |
| Reverse Recovery Time (trr) @ IF=30A, dI/dt=100A/μs, Tj=25°C | 70 | nS |
| Reverse Recovery Charge (Qrr) | 170 | nC |
| Maximum Junction-to-Ambient Resistance (RθJA) | 62.5 | °C/W |
| Maximum Junction-to-Case Resistance (RθJC) | 0.5 | °C/W |
| Packing | 2,000/Box | - |
| Publication Order Number | MSP100N045SA | - |
| Revision | A | - |
| Year | 2020 | - |
2412061551_Bruckewell-MSP100N045SA_C42407748.pdf
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