Compact SOT523 PNP transistor CBI MMBT3906T with epitaxial planar die construction lead free version
Key Attributes
Model Number:
MMBT3906T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
250MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3906T
Package:
SOT-523
Product Description
Product Overview
The MMBT3906T is a PNP transistor in a SOT-523 plastic-encapsulated package. It features epitaxial planar die construction and is available in a complementary NPN type. This transistor is also offered in a lead-free version.
Product Attributes
- Package Type: SOT-523
- Transistor Type: PNP
- Construction: Epitaxial Planar Die
- Marking: 3N
- Lead Free Version: Available
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| VCBO | Collector-Base Voltage | -40 | V | |||
| VCEO | Collector-Emitter Voltage | -40 | V | |||
| VEBO | Emitter-Base Voltage | -5.0 | V | |||
| IC | Collector Current - Continuous | -200 | mA | |||
| PC | Collector Power Dissipation | 150 | mW | |||
| RJA | Thermal Resistance, Junction to Ambient | 833 | /W | |||
| TJ | Operating Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | 150 | |||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC=-10A, IE=0 | -40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-1mA, IB=0 | -40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=-10A, IC=0 | -5 | V | ||
| ICBO | Collector cut-off current | VCB=-30V, IE=0 | -0.1 | A | ||
| IEBO | Emitter cut-off current | VEB=-5V, IC=0 | -0.1 | A | ||
| hFE | DC current gain | VCE=-1V, IC=-0.1mA | 60 | |||
| VCE=-1V, IC=-1mA | 80 | |||||
| VCE=-1V, IC=-10mA | 100 | 300 | ||||
| VCE=-1V, IC=-50mA | 60 | |||||
| hFE(5) | DC current gain | VCE=-1V, IC=-100mA | 30 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC=-10mA, IB=-1mA | -0.25 | V | ||
| IC=-50mA, IB=-5mA | -0.4 | V | ||||
| VBE(sat) | Base-emitter saturation voltage | IC=-10mA, IB=-1mA | -0.65 | -0.85 | V | |
| IC=-50mA, IB=-5mA | -0.95 | V | ||||
| fT | Transition frequency | VCE=-20V, IC=-10mA, f=100MHz | 250 | MHz | ||
| Cobo | Collector output capacitance | VCB=-5V, IE=0, f=1MHz | 4.5 | pF | ||
| Ciob | Input capacitance | VEB=-0.5V, IE=0, f=1MHz | 10 | pF | ||
| NF | Noise figure | VCE=-5V, IC=0.1mA, f | 4 | dB | ||
| td | Delay time | 35 | ns | |||
| tr | Rise time | VCC=-3V, VBE(OFF)=-0.5V | 35 | ns | ||
| IC=-10mA , IB1=-1mA | ||||||
| tS | Storage time | 225 | ns | |||
| tf | Fall time | VCC=-3V, IC=-10mA IB1= IB2=-1mA | 75 | ns | ||
| ICEX | Collector cut-off current | VCB=-30V,VBE(off)=-3V | -0.05 | A | ||
2105241831_CBI-MMBT3906T_C2828444.pdf
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