Trench DMOS N Channel MOSFET Bruckewell MSH80N087 80 Volt with Low Gate Charge and Excellent dvdt Capability
Key Attributes
Model Number:
MSH80N087
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
60A
RDS(on):
8.7mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
36nF@40V
Pd - Power Dissipation:
52W
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
MSH80N087
Package:
PDFN5x6-8
Product Description
Product Overview
The MSH80N087 is an N-Channel 80-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), deliver superior switching performance, and provide high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
General Features:
| Feature | Value |
|---|---|
| RDS(ON) | 8.7m @ VGS =10V |
| Gate Charge | Super Low |
| dv/dt Capability | Excellent |
Typical Applications:
- Networking
- Load Switch
- Synchronous Rectifier
- Quick Charger
Package Information:
| Package Type | Packing | Quantity per Reel |
|---|---|---|
| PDFN 5X6 | Reel | 3,000 |
Package Dimensions (Millimeter):
| Ref | Min | Nom | Max | Ref | Min | Nom | Max |
|---|---|---|---|---|---|---|---|
| A | 0.85 | 1.00 | 1.15 | E | 5.70 | - | 5.90 |
| A1 | 0.00 | - | 0.10 | e | - | 1.27 | - |
| b | 0.30 | - | 0.51 | H | 5.90 | - | 6.20 |
| c | 0.20 | - | 0.30 | L | - | 0.60 | - |
| D | 4.80 | - | 5.00 | L1 | 0.06 | - | 0.20 |
| F | 1.10 | Ref. | - | E2 | 3.50 | Ref. | - |
| K | 3.70 | 3.90 | 4.10 | 0 | - | 12 |
Marking: MSH80N087
Maximum Ratings:
| Symbol | Parameter | Value | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 80 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID | Continuous Drain Current (TC =25C) | 60 | A |
| Continuous Drain Current (TC =100C) | 38 | A | |
| IDM | Pulsed Drain Current | 170 | A |
| IAS | Single Pulse Avalanche Current (L =0.1mH) | 30 | A |
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 45 | mJ |
| PD | Power Dissipation (TC =25C) | 52 | W |
| TJ/TSTG | Operating Junction and Storage Temperature | -55 to 150 | C |
Thermal Resistance Ratings:
| Symbol | Parameter | Maximum | Units |
|---|---|---|---|
| RJA | Maximum Junction-to-Ambient | 65 | C/W |
| RJC | Maximum Junction-to-Case | 2.5 | C/W |
Electrical Characteristics (TJ=25C unless otherwise specified):
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250A | 1.2 | - | 2.3 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250A | 80 | - | - | V |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =20V | - | - | 100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =64V, VGS =0V, TJ =25C | - | - | 1 | A |
| VDS =64V, VGS =0V, TJ =55C | - | - | 5 | A | ||
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =10A | - | 7.2 | 8.7 | m |
| VGS =4.5V, ID =10A | - | 10.5 | 13 | m | ||
| EAS | Single Pulse Avalanche Energy | VDD =50V, L =0.1mH, IAS =15A | 11 | - | - | mJ |
| VSD | Diode Forward Voltage | IS =1A, VGS =0V, TJ =25C | - | - | 1.2 | V |
| IS | Continuous Source Current | VG =VD =0V, Force Current | - | - | 30 | A |
| ISM | Pulsed Source Current | - | - | - | 60 | A |
Dynamic Characteristics:
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Qg | Total Gate Charge | VDS =40V ID =10A VGS =10V | - | 29 | - | nC |
| Qgs | Gate-Source Charge | - | - | 7.7 | - | nC |
| Qgd | Gate-Drain Charge | - | - | 5.3 | - | nC |
| td(on) | Turn-On Delay Time | VDS =40V ID =10A VGS =10V RG =3.3 | - | 6.2 | - | ns |
| tr | Rise Time | - | - | 19 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 9.4 | - | ns |
| tf | Fall Time | - | - | 36 | - | ns |
| CISS | Input Capacitance | VDS =40V VGS =0V f =1.0MHz | - | 1738 | - | pF |
| COSS | Output Capacitance | - | - | 317 | - | pF |
| CRSS | Reverse Transfer Capacitance | - | - | 12 | - | pF |
| trr | Reverse Recovery Time | IF=10A, dI/dt=100A/s, Tj=25C | - | - | 35 | nS |
| Qrr | Reverse Recovery Charge | - | - | - | 62 | nC |
| Rg | Gate Resistance | VDS =0V, VGS =0V, f =1.0MHz | - | 1.5 | - |
Notes:
- 1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
- 3. The EAS data shows maximum rating. The test condition is VDD=50, VGS=10V, L=0.1mH, IAS=30A.
- 4. The power dissipation is limited by 150 junction temperature.
- 5. The Min. value is 100% EAS tested guarantee.
- 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2412061551_Bruckewell-MSH80N087_C42407742.pdf
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