P Channel MOSFET Bruckewell MSD100P12 designed to meet RoHS compliance and green device requirements
Key Attributes
Model Number:
MSD100P12
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
12A
RDS(on):
210mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF@30V
Number:
1 P-Channel
Pd - Power Dissipation:
38W
Input Capacitance(Ciss):
1.228nF@30V
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
MSD100P12
Package:
TO-252
Product Description
Product Overview
The MSD100P12 is a high-performance P-Channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for networking, load switch, and LED applications.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Model: MSD100P12
- Technology: P-Channel MOSFET
- Certifications: RoHS Compliant, Green Device Available
- Package Type: TO-252
- Sold As: 2,500/Reel
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | -100 | V | |||
| VGS (Gate-Source Voltage) | ±20 | V | |||
| ID (Continuous Drain Current) | (TC =25°C) | -12 | A | ||
| ID (Continuous Drain Current) | (TC =100°C) | -7.8 | A | ||
| IDM (Pulsed Drain Current) | 1,2 | -24 | A | ||
| IAS (Single Pulse Avalanche Current) | L =0.5mH3 | -14 | A | ||
| EAS (Single Pulse Avalanche Energy) | L =0.5mH3 | 49 | mJ | ||
| PD (Power Dissipation) | (TC =25°C) | 38 | W | ||
| PD (Power Dissipation) | (TA =25°C) | 2 | W | ||
| TJ/TSTG (Operating Junction and Storage Temperature) | -55 | +150 | °C | ||
| Thermal Resistance Ratings | |||||
| RθJA (Maximum Junction-to-Ambient) | 1 | 62.5 | °C/W | ||
| RθJC (Maximum Junction-to-Case) | 1 | 2.8 | °C/W | ||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | |||||
| VGS (th) (Gate Threshold Voltage) | VDS =VGS, ID =-250µA | -1.0 | -1.9 | -2.5 | V |
| BVDSS (Drain-Source Breakdown Voltage) | VGS =0V, ID =-250µA | -100 | - | - | V |
| IGSS (Gate-Source Leakage Current) | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS (Drain-Source Leakage Current) | VDS =-100V, VGS =0V, TJ =25°C | - | - | -1 | µA |
| IDSS (Drain-Source Leakage Current) | VDS =-80V, VGS =0V, TJ =125°C | - | - | -10 | µA |
| RDS (on) (Static Drain-Source On-Resistance) | VGS =-10V, ID =-5A | - | 170 | 210 | mΩ |
| RDS (on) (Static Drain-Source On-Resistance) | VGS =-4.5V, ID =-3A | - | 190 | 240 | mΩ |
| EAS (Single Pulse Avalanche Energy) | VDD =-25V, L =0.5mH, IAS =-10A5 | 25 | - | - | mJ |
| VSD (Diode Forward Voltage) | IS =-5A, VGS =0V, TJ =25°C2 | - | - | -1.2 | V |
| IS (Continuous Source Current) | 1,6 | - | - | -12 | A |
| ISM (Pulsed Source Current) | 2,6 | - | - | -24 | A |
| Dynamic Characteristics | |||||
| Qg (Total Gate Charge) | 2 | - | 19 | - | nC |
| Qgs (Gate-Source Charge) | - | 3.4 | - | nC | |
| Qgd (Gate-Drain Charge) | VDS =-50V, ID =-5A, VGS =-10V | - | 2.9 | - | nC |
| td(on) (Turn-On Delay Time) | 2 | - | 9 | - | ns |
| tr (Rise Time) | - | 6 | - | ns | |
| td(off) (Turn-Off Delay Time) | VDS =-30V, ID =-1A, VGS =-10V, RG =3.3Ω | - | 39 | - | ns |
| tf (Fall Time) | - | 33 | - | ns | |
| CISS (Input Capacitance) | VDS =-30V, VGS =0V, f =1.0MHz | - | 1228 | - | pF |
| COSS (Output Capacitance) | - | 41 | - | pF | |
| CRSS (Reverse Transfer Capacitance) | - | 29 | - | pF | |
| Rg (Gate Resistance) | VGS =VDS =0V, f =1.0MHz | - | 13 | - | Ω |
Notes:
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows maximum rating. The test condition is V DD=-25V, VGS=-10V, L=0.5mH, IAS=-14A.
4. The power dissipation is limited by 150 junction temperature.
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2412061551_Bruckewell-MSD100P12_C42407724.pdf
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