power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with advanced trench DMOS technology
Key Attributes
Model Number:
MSH30P100
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
505pF
Input Capacitance(Ciss):
7.93nF@25V
Pd - Power Dissipation:
138W
Gate Charge(Qg):
146nC
Mfr. Part #:
MSH30P100
Package:
PDFN5x6-8
Product Description
Product Overview
The MSH30P100 is a P-Channel 30-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is optimized for minimal RDS(ON), superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications and meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. The device is designed for applications requiring efficient power management, including motor drivers, POL applications, load switches, and LED drivers.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Key Feature: 100% EAS Guaranteed
- Package Type: PDFN 5X6
- Packing: 3,000/Reel
Technical Specifications
| MSH30P100 P-Channel 30-V (D-S) MOSFET | ||||
|---|---|---|---|---|
| Symbol | Parameter | Test Conditions | Value | Units |
| Features | ||||
| RDS(ON) | Static Drain-Source On-Resistance | VGS =-10V, ID =-30A | 3.3 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS =-4.5V, ID =-20A | 5.0 | m |
| Fast switching | ||||
| Suit for -4.5V Gate Drive Applications | ||||
| EAS | 100% EAS Guaranteed | |||
| Typical Applications | ||||
| Motor Driver Applications | ||||
| POL Applications | ||||
| Load Switch | ||||
| LED Applications | ||||
| Maximum Ratings | ||||
| VDS | Drain-Source Voltage | -30 | V | |
| VGS | Gate-Source Voltage | 20 | V | |
| ID | Continuous Drain Current (TC =25C) | -100 | A | |
| ID | Continuous Drain Current (TC =100C) | -63.2 | A | |
| IDM | Pulsed Drain Current | (Pulse width 300s, duty cycle 2%) | -400 | A |
| IAS | Single Pulse Avalanche Current (L =0.1mH) | -80 | A | |
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 320 | mJ | |
| PD | Power Dissipation (TC =25C) | 138 | W | |
| PD | Power Dissipation (TA =25C) | 2 | W | |
| TJ/TSTG | Operating Junction and Storage Temperature | -55 to +150 | C | |
| Thermal Resistance Ratings | ||||
| RJA | Maximum Junction-to-Ambient | (Tested on 1 inch FR-4 board with 2OZ copper) | 62.5 | C/W |
| RJC | Maximum Junction-to-Case | (Tested on 1 inch FR-4 board with 2OZ copper) | 0.9 | C/W |
| Electrical Characteristics (TJ=25C unless otherwise specified) | ||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250A | -1.2 to -2.2 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250A | -30 | V |
| gfs | Forward Transconductance | VDS =-10V, ID =-3A | 20 | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =20V | 100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =-30V, VGS =0V, TJ =25C | -1 | A |
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =125C | -10 | A |
| RDS (on) | Static Drain-Source On-Resistance | VGS =-10V, ID =-30A | 2.7 to 3.3 | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =-4.5V, ID =-20A | 4.0 to 5.0 | m |
| EAS | Single Pulse Avalanche Energy | VDD =-25V, L =0.1mH, IAS =-30A | 45 | mJ |
| VSD | Diode Forward Voltage | IS =-30A, VGS =0V, TJ =25C | -1.2 | V |
| IS | Continuous Source Current | -100 | A | |
| ISM | Pulsed Source Current | VG =VD =0V, Force Current | -200 | A |
| Dynamic Characteristics | ||||
| Qg | Total Gate Charge | VDS =-24V, ID =-10A, VGS =-10V | 146 | nC |
| Qgs | Gate-Source Charge | VDS =-24V, ID =-10A, VGS =-10V | 22 | nC |
| Qgd | Gate-Drain Charge | VDS =-24V, ID =-10A, VGS =-10V | 32 | nC |
| td(on) | Turn-On Delay Time | VDS =-15V, ID =-10A, VGS =-10V, RG =5 | 17 | ns |
| tr | Rise Time | VDS =-15V, ID =-10A, VGS =-10V, RG =5 | 61 | ns |
| td(off) | Turn-Off Delay Time | VDS =-15V, ID =-10A, VGS =-10V, RG =5 | 200 | ns |
| tf | Fall Time | VDS =-15V, ID =-10A, VGS =-10V, RG =5 | 113 | ns |
| CISS | Input Capacitance | VDS =-25V, VGS =0V, f =1.0MHz | 7930 | pF |
| COSS | Output Capacitance | VDS =-25V, VGS =0V, f =1.0MHz | 983 | pF |
| CRSS | Reverse Transfer Capacitance | VDS =-25V, VGS =0V, f =1.0MHz | 505 | pF |
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | 3.6 | |
2410121453_Bruckewell-MSH30P100_C22465586.pdf
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