Power switching made with Bruckewell MS60N05 trench MOSFET featuring excellent RDS ON characteristics
Key Attributes
Model Number:
MS60N05
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
46pF
Number:
1 N-channel
Output Capacitance(Coss):
65pF
Pd - Power Dissipation:
2.7W
Input Capacitance(Ciss):
1.027nF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
MS60N05
Package:
SOT-23
Product Description
Product Overview
The MS60N05 is a high-performance trench N-channel MOSFET designed with extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Typical applications include motor drive, power tools, and LED lighting.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Line: N-Channel MOSFET
- Model: MS60N05
- Package Type: SOT-23
- Certifications: RoHS Compliant, Green Device Available
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current1 | (TA =25°C) | 5 | A | ||
| (TA =70°C) | 3.5 | A | ||||
| IDM | Pulsed Drain Current1,2 (TA =25°C) | 30 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 22 | mJ | |||
| IAS | Single Pulse Avalanche Current3 | 21 | A | |||
| PD | Power Dissipation4 (TA =25°C) | 2.7 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient1 | 125 | °C/W | |||
| RθJC | Maximum Junction-to-case1 | 80 | °C/W | |||
| Electrical Characteristics (TJ =25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250μA | 1.0 | - | 2.5 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250μA | 60 | - | - | V |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =48V, VGS =0V, TJ =25°C | - | - | 1 | μA |
| VDS =48V, VGS =0V, TJ =55°C | - | - | 5 | μA | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =10V, ID =4A | - | - | 60 | mΩ |
| VGS =4.5V, ID =2A | - | - | 70 | mΩ | ||
| VSD | Diode Forward Voltage2 | IS =1A, VGS =0V, TJ =25°C | - | - | 1.2 | V |
| IS | Continuous Source Current1,5 (Diode) | VG =VD =0V, Force Current | - | - | 5 | A |
| Dynamic and Switching Characteristics | ||||||
| Qg | Total Gate Charge2 | VDS =48V ID =4A VGS =10V | - | 19 | - | nC |
| Qgs | Gate-Source Charge | - | 2.6 | - | nC | |
| Qgd | Gate-Drain (Miller) Charge | - | 4.1 | - | nC | |
| td(on) | Turn-On Delay Time2 | VDS =30V ID =4A VGS =10V RG =3.3Ω | - | 3 | - | ns |
| tr | Rise Time | - | 34 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 23 | - | ns | |
| tf | Fall Time | - | 6 | - | ns | |
| CISS | Input Capacitance | VDS =15V VGS =0V f =1.0MHz | - | 1027 | - | pF |
| COSS | Output Capacitance | - | 65 | - | pF | |
| CRSS | Reverse Transfer Capacitance | - | 46 | - | pF | |
Notes:
1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating with test condition VDD=25V, VGS=10V, L=0.1mH, IAS=21A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2412061551_Bruckewell-MS60N05_C42407720.pdf
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