Power optimized P channel MOSFET Bruckewell MSQ30P15 suitable for LED load switches and POL modules
Key Attributes
Model Number:
MSQ30P15
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
15A
RDS(on):
12mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
237pF
Output Capacitance(Coss):
310pF
Input Capacitance(Ciss):
2.215nF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
MSQ30P15
Package:
SOP-8
Product Description
Product Overview
The MSQ30P15 is a high-performance trench P-channel MOSFET designed with extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key applications include MB, VGA, Vcore, POL applications, load switches, and LED applications.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Line: P-Channel MOSFET
- Model: MSQ30P15
- Certifications: RoHS Compliant, Green Device Available
- Package Type: SOP-8
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | ±20 | V | ||
| ID | Continuous Drain Current (TC =25°C) | -15 | A | |||
| ID | Continuous Drain Current (TC =70°C) | -12 | A | |||
| IDM | Pulsed Drain Current1,2 | -45 | A | |||
| ID | Continuous Drain Current (TA =25°C) | -9.0 | A | |||
| ID | Continuous Drain Current (TA =70°C) | -7.2 | A | |||
| IAS | Single Pulse Avalanche Current, L =0.1mH3 | -46 | A | |||
| EAS | Single Pulse Avalanche Energy, L =0.1mH3 | 105 | mJ | |||
| PD | Power Dissipation4 (TA =25°C) | 1.5 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient1 | 85 | °C/W | |||
| RθJC | Maximum Junction-to-Case1 | 30 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250µA | -1.0 | -2.5 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250µA | -30 | V | ||
| gfs | Forward Transconductance | VDS =-5V, ID =-10A | 24 | S | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | ±100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =25°C | -1 | µA | ||
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =55°C | -5 | µA | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =-10V, ID =-12A | 12 | mΩ | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =-4.5V, ID =-8A | 20 | mΩ | ||
| EAS | Single Pulse Avalanche Energy5 | VDD =-25V, L =0.1mH, IAS =-33A | 54 | mJ | ||
| VSD | Diode Forward Voltage2 | IS =-12A, VGS =0V, TJ =25°C | -1.2 | V | ||
| IS | Continuous Source Current1,6 | -15 | A | |||
| ISM | Pulsed Source Current2,6 | VG =VD =0V, Force Current | -45 | A | ||
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge2 | VDS =-15V, ID =-10A, VGS =-4.5V | 20 | nC | ||
| Qgs | Gate-Source Charge | 5.1 | nC | |||
| Qgd | Gate-Drain Charge | 7.3 | nC | |||
| td(on) | Turn-On Delay Time2 | 33.8 | ns | |||
| tr | Rise Time | 35.8 | ns | |||
| td(off) | Turn-Off Delay Time | 72.8 | ns | |||
| tf | Fall Time | VDS =-15V, ID =-1A, VGS =-10V, RG =3.3Ω | 10.5 | ns | ||
| CISS | Input Capacitance | VDS =-15V, VGS =0V, f =1.0MHz | 2215 | pF | ||
| COSS | Output Capacitance | 310 | pF | |||
| CRSS | Reverse Transfer Capacitance | 237 | pF | |||
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | 9 | Ω | ||
2410121628_Bruckewell-MSQ30P15_C22465590.pdf
Related Products
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
