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quality Power MOSFET BORN BMF20N65G with 650 volt drain source voltage and 20 amp continuous current rating factory
quality Power MOSFET BORN BMF20N65G with 650 volt drain source voltage and 20 amp continuous current rating factory

Power MOSFET BORN BMF20N65G with 650 volt drain source voltage and 20 amp continuous current rating

Key Attributes
Model Number: BMF20N65G
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-
RDS(on):
500mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
2.98nF@25V
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
BMF20N65G
Package:
TO-220F
Product Description

Product Overview

The BMx20N65 is a high-performance N-Channel MOSFET designed by BORN SEMICONDUCTOR, INC. This MOSFET features a high drain-source voltage (VDSS) of 650V and a continuous drain current (ID) of 20A, with a low on-resistance (RDS(ON)) of 0.5 at VGS=10V. Its fast switching characteristics and low gate charge make it ideal for power switch circuits in adaptors and chargers. The device is constructed with molded plastic, meeting UL Flammability Classification Rating 94V-0, and is compliant with the EU RoHS 2011/65/EU directive.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Product Line: BMx20N65
  • Material: Molded Plastic
  • Flammability Rating: UL 94V-0
  • Compliance: EU RoHS 2011/65/EU directive
  • Lead Status: Lead free
  • Solder Bath Temperature: 275C maximum, 10s per JESD 22-B106
  • Mounting Position: Any
  • Note on Order Code: "G" suffix indicates a thick frame.

Technical Specifications

Model Package VDSS (V) ID (A) RDS(ON) @ VGS=10V () MAX Power Dissipation (W) Junction Temperature (C) Storage Temperature (C) Thermal Resistance, Junction to Case (C/W) Thermal Resistance, Junction to Ambient (C/W) Gate Threshold Voltage (V) Input Capacitance (pF) Output Capacitance (pF) Reverse Transfer Capacitance (pF) Total Gate Charge (nC) Diode Forward Voltage (V) Reverse Recovery Time (ns) Reverse Recovery Charge (C)
BMx20N65 TO-220AB 650 20 0.5 250 150 -55 to +150 0.5 40 2 - 4 2980 320 20 58 1 590 6.8
BMx20N65 TO-220F 45 2.78 62.5
BMx20N65 TO-263 650 20 0.5 250 150 -55 to +150 0.5 40 2 - 4 2980 320 20 58 1 590 6.8
Ordering Information Package Base Quantity Delivery Mode
BME20N65/G TO-220AB 50pcs/tube 1kpcs/box, 5kpcs/carton
BMF20N65/G TO-220F 50pcs/tube 1kpcs/box, 5kpcs/carton
BMK20N65/G TO-263 50pcs/tube 1kpcs/box, 5kpcs/carton
BMK20N65-R/G TO-263 800pcs/reel 800pcs/box, 4kpcs/carton

Note: Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.


2412021443_BORN-BMF20N65G_C42402389.pdf

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