60 Volt Dual N Channel MOSFET Bruckewell MSHM60N29D for Motor Control and DC DC Converter Applications
Product Overview
The MSHM60N29D is a Dual N-Channel 60-V (D-S) MOSFET from Bruckewell Technology Corporation, utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), deliver superior switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device adheres to RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval. Typical applications include motor control, DC/DC converters, and synchronous rectifier circuits.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- 100% EAS Guaranteed
Technical Specifications
| Model | Description | RDS(ON) | Voltage | Current | Package Type | Packing |
|---|---|---|---|---|---|---|
| MSHM60N29D | Dual N-Channel 60-V (D-S) MOSFET | 15m @ VGS =10V | 60 V | 29 A (Continuous Drain Current @ TC =25C) | PDFN 3.3X3.3 Dual | 3,000/Reel |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current (TC =25C) | 29 | A | |||
| ID | Continuous Drain Current (TC =100C) | 23 | A | |||
| IDM | Pulsed Drain Current | 58 | A | |||
| IAS | Single Pulse Avalanche Current (L =0.1mH) | 30 | A | |||
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 45 | mJ | |||
| PD | Power Dissipation (TC =25C) | 21 | W | |||
| PD | Power Dissipation (TA =25C) | 1.2 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | C | ||
| Thermal Resistance Ratings | ||||||
| RJA | Maximum Junction-to-Ambient | (Note 1) | 62.5 | C/W | ||
| RJC | Maximum Junction-to-Case | (Note 1) | 6 | C/W | ||
| Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250A | 1.2 | 2 | 2.5 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250A | 60 | - | - | V |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =20V | - | - | 100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =60V, VGS =0V, TJ =25C | - | - | 1 | A |
| IDSS | Drain-Source Leakage Current | VDS =48V, VGS =0V, TJ =85C | - | - | 10 | A |
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =10A (Note 2) | - | 10.5 | 15 | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =4.5V, ID =8A (Note 2) | - | 16 | 21 | m |
| EAS | Single Pulse Avalanche Energy | VDD =25V, L =0.1mH, IAS =15A (Note 5) | 11 | - | - | mJ |
| VSD | Diode Forward Voltage | IS =10A, VGS =0V, TJ =25C (Note 2) | - | - | 1.2 | V |
| IS | Continuous Source Current | (Note 1, 6) | - | - | 29 | A |
| ISM | Pulsed Source Current | (Note 2, 6) | - | - | 40 | A |
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | VDS =30V ID =10A VGS =10V (Note 2) | - | 15.8 | - | nC |
| Qgs | Gate-Source Charge | - | 3.1 | - | nC | |
| Qgd | Gate-Drain Charge | - | 4.4 | - | nC | |
| td(on) | Turn-On Delay Time | VDS =25V ID =10A VGS =10V RG =3.3 (Note 2) | - | 5.8 | - | ns |
| tr | Rise Time | - | 3.5 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 26 | - | ns | |
| tf | Fall Time | - | 3.2 | - | ns | |
| CISS | Input Capacitance | VDS =25V VGS =0V f =1.0MHz | - | 760 | - | pF |
| COSS | Output Capacitance | - | 272 | - | pF | |
| CRSS | Reverse Transfer Capacitance | - | 26 | - | pF | |
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | - | 1.0 | - | |
Notes:
1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows maximum rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=30A.
4. The power dissipation is limited by 150 junction temperature.
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2412061551_Bruckewell-MSHM60N29D_C42407744.pdf
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