P Channel 30 Volt MOSFET Bruckewell MSHM30P32 engineered for MB POL and load switch power management solutions
Key Attributes
Model Number:
MSHM30P32
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
32A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V;27mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
158pF
Output Capacitance(Coss):
194pF
Pd - Power Dissipation:
29W
Input Capacitance(Ciss):
1.345nF
Gate Charge(Qg):
12.5nC@4.5V
Mfr. Part #:
MSHM30P32
Package:
PDFN-8(3.3x3.3)
Product Description
Product Overview
The MSHM30P32 is a high-performance P-Channel 30-V (D-S) MOSFET from Bruckewell Technology Corporation. Engineered with extreme high cell density, it offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability. Typical applications include MB, VGA, Vcore, POL, load switch, and LED applications.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Model: MSHM30P32
- Channel Type: P-Channel
- Voltage Rating: 30-V (D-S)
- Certifications: RoHS Compliant, Green Device Available
- Package Type: PDFN 3.3X3.3
- Packing: 3,000/Reel
Technical Specifications
| Maximum Ratings and Electrical Characteristics | ||
|---|---|---|
| Symbol | Parameter | Value / Units |
| VDS | Drain-Source Voltage | -30 V |
| VGS | Gate-Source Voltage | ±20 V |
| ID | Continuous Drain Current (TC =25°C) | -32 A |
| ID | Continuous Drain Current (TC =100°C) | -20 A |
| IDM | Pulsed Drain Current | -65 A |
| IAS | Single Pulse Avalanche Current (L =0.1mH) | -38 A |
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 72.2 mJ |
| PD | Power Dissipation (TC =25°C) | 29 W |
| PD | Power Dissipation (TA =25°C) | 1.67 W |
| TJ/TSTG | Operating Junction and Storage Temperature | -55 to +150 °C |
| RθJA | Maximum Junction-to-Ambient | 75 °&C/W |
| RθJC | Maximum Junction-to-Case | 4.3 °&C/W |
| VGS (th) | Gate Threshold Voltage (VDS =VGS, ID =-250µA) | -1.0 to -2.5 V |
| BVDSS | Drain-Source Breakdown Voltage (VGS =0V, ID =-250µA) | -30 V |
| gfs | Forward Transconductance (VDS =-5V, ID =-15A) | 19 S |
| IGSS | Gate-Source Leakage Current (VDS =0V, VGS =±20V) | ±100 nA |
| IDSS | Drain-Source Leakage Current (VDS =-30V, VGS =0V, TJ =25°C) | -1 µA |
| RDS (on) | Static Drain-Source On-Resistance (VGS =-10V, ID =-15A) | 18 to 20 mΩ |
| RDS (on) | Static Drain-Source On-Resistance (VGS =-4.5V, ID =-10A) | 27 to 32 mΩ |
| EAS | Single Pulse Avalanche Energy (VDD =-25V, L =0.1mH, IAS =-20A) | 20 mJ |
| VSD | Diode Forward Voltage (IS =-15A, VGS =0V, TJ =25°C) | -1.2 V |
| IS | Continuous Source Current | -32 A |
| ISM | Pulsed Source Current | -65 A |
| Dynamic Characteristics | ||
|---|---|---|
| Symbol | Parameter | Typical Value / Units |
| Qg | Total Gate Charge | 12.5 nC |
| Qgs | Gate-Source Charge | 5.4 nC |
| Qgd | Gate-Drain Charge (VDS =-15V, ID =-15A, VGS =-4.5V) | 5 nC |
| td(on) | Turn-On Delay Time (VDS =-15V, ID =-15A, VGS =-10V, RG =3.3Ω) | 4.4 ns |
| tr | Rise Time (VDS =-15V, ID =-15A, VGS =-10V, RG =3.3Ω) | 11.2 ns |
| td(off) | Turn-Off Delay Time (VDS =-15V, ID =-15A, VGS =-10V, RG =3.3Ω) | 34 ns |
| tf | Fall Time (VDS =-15V, ID =-15A, VGS =-10V, RG =3.3Ω) | 18 ns |
| CISS | Input Capacitance (VDS =-15V, VGS =0V, f =1.0MHz) | 1345 pF |
| COSS | Output Capacitance (VDS =-15V, VGS =0V, f =1.0MHz) | 194 pF |
| CRSS | Reverse Transfer Capacitance (VDS =-15V, VGS =0V, f =1.0MHz) | 158 pF |
| Rg | Gate Resistance (VGS =VDS =0V, f =1.0MHz) | 13 Ω |
| Package Dimensions (PDFN 3.3X3.3) | |||
|---|---|---|---|
| REF | Min. | Nom. | Max. |
| A | 0.70 | 0.75 | 0.80 |
| b | 0.25 | 0.30 | 0.35 |
| C | 0.10 | 0.15 | 0.25 |
| D | 3.25 | 3.35 | 3.45 |
| D1 | 3.00 | 3.10 | 3.20 |
| D2 | 1.78 | 1.88 | 1.98 |
| D3 | - | 0.13 | - |
| E | 3.20 | 3.30 | 3.40 |
| E1 | 3.00 | 3.15 | 3.20 |
| E2 | 2.39 | 2.49 | 2.59 |
| e | 0.65 BSC | ||
| H | 0.30 | 0.39 | 0.50 |
| L | 0.30 | 0.40 | 0.50 |
| L1 | - | 0.13 | 0.20 |
| θ | - | 10° | 12° |
| M | - | - | 0.15 |
2506261749_Bruckewell-MSHM30P32_C46643167.pdf
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