N Channel MOSFET BORN BMF12N65G designed for power switch circuits in chargers featuring 650V drain source voltage
Product Overview
The BMx12N65 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. designed for power switch circuits in adaptors and chargers. It features a high Drain-Source Voltage (VDSS) of 650V and a continuous Drain Current (ID) of 12A, with a low On-Resistance (RDS(ON)) of typically 0.59 at VGS=10V. This MOSFET is characterized by its fast switching capabilities and low gate charge, making it suitable for efficient power applications. The device is constructed with molded plastic, rated UL Flammability Classification 94V-0, and is compliant with the EU RoHS 2011/65/EU directive.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Product Line: BMx12N65
- Technology: N-Channel MOSFET
- Material: Molded Plastic
- Flammability Rating: UL 94V-0
- Compliance: EU RoHS 2011/65/EU directive
Technical Specifications
| Model | Package | Base Quantity | Delivery Mode |
|---|---|---|---|
| BME12N65/G | TO-220AB | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMF12N65/G | TO-220F | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMK12N65/G | TO-263 | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMK12N65-R/G | TO-263 | 800pcs/reel | 800pcs/box, 4kpcs/carton |
| Symbol | Parameters | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (@TA=25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Continue Drain Current | 12 | A | |||
| IDM | Pulsed Drain Current (Note1) | 48 | A | |||
| PD | Power Dissipation | 150 / 42 | W (TO-220AB/TO-263 / TO-220F) | |||
| EAS | Single Pulse Avalanche Energy (Note1) | 750 | mJ | |||
| TJ | Junction Temperature Range | -55 | 150 | C | ||
| TSTG | Storage Temperature Range | -55 | 150 | C | ||
| RJC | Thermal Resistance, Junction to Case | 0.83 / 2.98 | C/W (TO-220AB/TO-263 / TO-220F) | |||
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C/W | |||
| Electrical Characteristics (TA=25C unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID=250uA | 650 | 690 | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS=0V | 1 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30V, VDS=0V | 100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, ID=250uA | 2 | 4 | V | |
| RDS(on) | Static Drain-source On Resistance | VGS=10V, ID=6A | 0.59 | 0.70 | ||
| gfs | Forward Transconductance | VDS=40V, ID=6A | 11 | S | ||
| Ciss | Input capacitance | VDS = 25V, VGS =0V, f = 1MHz | 2450 | pF | ||
| Coss | Output capacitance | 140 | pF | |||
| Crss | Reverse transfer capacitance | 9 | pF | |||
| Td(on) | Turn-on delay time (Note1) | VDD=325V, ID =12A, RG =10 | 29 | ns | ||
| Tr | Turn-on Rise time (Note1) | 27 | ns | |||
| Td(off) | Turn-Off Delay Time (Note1) | 65 | ns | |||
| Tf | Turn-Off Fall time (Note1) | 46 | ns | |||
| Qgs | Gate to Source Charge (Note1) | VDD=520V, VGS=10V, ID=12A | 10 | nC | ||
| Qgd | Gate to Drain Charge (Note1) | 14 | nC | |||
| Qg | Total Gate Charge (Note1) | 50 | nC | |||
| VSD | Diode Forward Voltage | ISD=12A | 1.5 | V | ||
| IS | Diode Forward Current | 12 | A | |||
| ISM | Diode Pulsed Current | 48 | A | |||
| Trr | Reverse Recovery Time (Note1) | ISD =12A, VGS=0V, dIF/dt=100A/s | 670 | ns | ||
| Qrr | Reverse Recovery Charge (Note1) | 4.4 | C | |||
| Note1: Pulse test: 300 s pulse width, 2% duty cycle. | ||||||
| Packaging Tape - TO-220AB | Packaging Tape - TO-220F | Packaging Tape - TO-263 | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Symbol | Millimeters | MIN. | TYP. | MAX. | Symbol | Millimeters | MIN. | TYP. | MAX. | Symbol | Millimeters | MIN. | TYP. | MAX. |
| A | 4.30 | 4.50 | 4.70 | A | 4.30 | 4.60 | 4.80 | A1 | 0 | 0.25 | ||||
| A1 | 2.52 | 2.67 | 2.82 | A1 | 2.70 | 2.80 | 2.90 | B | 1.32 | 1.37 | 1.42 | |||
| b | 0.71 | 0.81 | 0.91 | b | 0.70 | 0.80 | 0.90 | b1 | 1.30 | 1.40 | 1.45 | |||
| b1 | 1.17 | 1.27 | 1.37 | b1 | 1.20 | 1.30 | 1.40 | b2 | 0.81 | |||||
| C | 0.30 | 0.40 | 0.50 | C | 0.40 | 0.50 | 0.60 | C | 4.52 | 4.57 | 4.62 | |||
| C1 | 1.17 | 1.27 | 1.37 | C1 | 2.40 | 2.60 | 2.80 | C1 | 1.27 | |||||
| D | 9.90 | 10.00 | 10.20 | D | 9.90 | 10.00 | 10.20 | C2 | 2.64 | 2.69 | 2.74 | |||
| E | 8.50 | 8.70 | 8.90 | E | 15.20 | 15.60 | 16.00 | C3 | 0.38 | |||||
| E1 | 12.00 | 12.25 | 12.50 | e | 2.44 | 2.54 | 2.64 | D | 10.11 | 10.16 | 10.21 | |||
| e | 2.44 | 2.54 | 2.64 | e1 | 4.88 | 5.08 | 5.26 | E | 10.02 | 10.07 | 10.12 | |||
| e1 | 4.88 | 5.08 | 5.26 | F | 3.00 | 3.30 | 3.60 | e | 2.54 | |||||
| F | 2.60 | 2.75 | 2.80 | L | 12.70 | 13.20 | 13.70 | L | 14.65 | 14.95 | 15.25 | |||
| L | 13.00 | 13.50 | 14.00 | L1 | 2.70 | 2.90 | 3.10 | L1 | 4.60 | 4.90 | 5.20 | |||
| L1 | 3.80 | 4.00 | 4.20 | d | 3.10 | 3.20 | 3.30 | L2 | 2.25 | 2.45 | 2.65 | |||
| L3 | 1.10 | 1.30 | 1.50 | |||||||||||
| 6 | 7 | 8 | ||||||||||||
| 1 | 6 | 7 | 8 | |||||||||||
| 2 | 0 | 8 | ||||||||||||
| 3 | 2 | 3 | 4 | |||||||||||
| 4 | 2 | 3 | 4 | |||||||||||
| 5 | 20 | |||||||||||||
2412021443_BORN-BMF12N65G_C42402386.pdf
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