N Channel MOSFET BORN BMF12N65G designed for power switch circuits in chargers featuring 650V drain source voltage

Key Attributes
Model Number: BMF12N65G
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
700mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
2.45nF
Pd - Power Dissipation:
42W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
BMF12N65G
Package:
TO-220F
Product Description

Product Overview

The BMx12N65 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. designed for power switch circuits in adaptors and chargers. It features a high Drain-Source Voltage (VDSS) of 650V and a continuous Drain Current (ID) of 12A, with a low On-Resistance (RDS(ON)) of typically 0.59 at VGS=10V. This MOSFET is characterized by its fast switching capabilities and low gate charge, making it suitable for efficient power applications. The device is constructed with molded plastic, rated UL Flammability Classification 94V-0, and is compliant with the EU RoHS 2011/65/EU directive.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Product Line: BMx12N65
  • Technology: N-Channel MOSFET
  • Material: Molded Plastic
  • Flammability Rating: UL 94V-0
  • Compliance: EU RoHS 2011/65/EU directive

Technical Specifications

Model Package Base Quantity Delivery Mode
BME12N65/G TO-220AB 50pcs/tube 1kpcs/box, 5kpcs/carton
BMF12N65/G TO-220F 50pcs/tube 1kpcs/box, 5kpcs/carton
BMK12N65/G TO-263 50pcs/tube 1kpcs/box, 5kpcs/carton
BMK12N65-R/G TO-263 800pcs/reel 800pcs/box, 4kpcs/carton
Symbol Parameters Conditions Min. Typ. Max. Unit
Maximum Ratings (@TA=25C unless otherwise noted)
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage 30 V
ID Continue Drain Current 12 A
IDM Pulsed Drain Current (Note1) 48 A
PD Power Dissipation 150 / 42 W (TO-220AB/TO-263 / TO-220F)
EAS Single Pulse Avalanche Energy (Note1) 750 mJ
TJ Junction Temperature Range -55 150 C
TSTG Storage Temperature Range -55 150 C
RJC Thermal Resistance, Junction to Case 0.83 / 2.98 C/W (TO-220AB/TO-263 / TO-220F)
RJA Thermal Resistance, Junction to Ambient 62.5 C/W
Electrical Characteristics (TA=25C unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID=250uA 650 690 V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS=0V 1 A
IGSS Gate-Source Leakage Current VGS = 30V, VDS=0V 100 nA
VGS(TH) Gate Threshold Voltage VGS = VDS, ID=250uA 2 4 V
RDS(on) Static Drain-source On Resistance VGS=10V, ID=6A 0.59 0.70
gfs Forward Transconductance VDS=40V, ID=6A 11 S
Ciss Input capacitance VDS = 25V, VGS =0V, f = 1MHz 2450 pF
Coss Output capacitance 140 pF
Crss Reverse transfer capacitance 9 pF
Td(on) Turn-on delay time (Note1) VDD=325V, ID =12A, RG =10 29 ns
Tr Turn-on Rise time (Note1) 27 ns
Td(off) Turn-Off Delay Time (Note1) 65 ns
Tf Turn-Off Fall time (Note1) 46 ns
Qgs Gate to Source Charge (Note1) VDD=520V, VGS=10V, ID=12A 10 nC
Qgd Gate to Drain Charge (Note1) 14 nC
Qg Total Gate Charge (Note1) 50 nC
VSD Diode Forward Voltage ISD=12A 1.5 V
IS Diode Forward Current 12 A
ISM Diode Pulsed Current 48 A
Trr Reverse Recovery Time (Note1) ISD =12A, VGS=0V, dIF/dt=100A/s 670 ns
Qrr Reverse Recovery Charge (Note1) 4.4 C
Note1: Pulse test: 300 s pulse width, 2% duty cycle.
Packaging Tape - TO-220AB Packaging Tape - TO-220F Packaging Tape - TO-263
Symbol Millimeters MIN. TYP. MAX. Symbol Millimeters MIN. TYP. MAX. Symbol Millimeters MIN. TYP. MAX.
A 4.30 4.50 4.70 A 4.30 4.60 4.80 A1 0 0.25
A1 2.52 2.67 2.82 A1 2.70 2.80 2.90 B 1.32 1.37 1.42
b 0.71 0.81 0.91 b 0.70 0.80 0.90 b1 1.30 1.40 1.45
b1 1.17 1.27 1.37 b1 1.20 1.30 1.40 b2 0.81
C 0.30 0.40 0.50 C 0.40 0.50 0.60 C 4.52 4.57 4.62
C1 1.17 1.27 1.37 C1 2.40 2.60 2.80 C1 1.27
D 9.90 10.00 10.20 D 9.90 10.00 10.20 C2 2.64 2.69 2.74
E 8.50 8.70 8.90 E 15.20 15.60 16.00 C3 0.38
E1 12.00 12.25 12.50 e 2.44 2.54 2.64 D 10.11 10.16 10.21
e 2.44 2.54 2.64 e1 4.88 5.08 5.26 E 10.02 10.07 10.12
e1 4.88 5.08 5.26 F 3.00 3.30 3.60 e 2.54
F 2.60 2.75 2.80 L 12.70 13.20 13.70 L 14.65 14.95 15.25
L 13.00 13.50 14.00 L1 2.70 2.90 3.10 L1 4.60 4.90 5.20
L1 3.80 4.00 4.20 d 3.10 3.20 3.30 L2 2.25 2.45 2.65
L3 1.10 1.30 1.50
6 7 8
1 6 7 8
2 0 8
3 2 3 4
4 2 3 4
5 20

2412021443_BORN-BMF12N65G_C42402386.pdf

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