SOT23 Package Lead Free P Channel MOSFET BORN SI2301F Suitable for Surface Mount and PWM Applications

Key Attributes
Model Number: SI2301F
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@2.5V,1A
Gate Threshold Voltage (Vgs(th)):
650mV
Reverse Transfer Capacitance (Crss@Vds):
48pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
280pF@10V
Pd - Power Dissipation:
-
Gate Charge(Qg):
4.8nC
Mfr. Part #:
SI2301F
Package:
SOT-23
Product Description

Product Overview

The SI2301F is a P-Channel MOSFET featuring advanced trench process technology for high power and current handling capability. It is designed for surface mount applications using the SOT-23 package. This product is lead-free. Ideal for PWM applications and load switching.

Product Attributes

  • Brand: Not explicitly stated, but associated with www.born-tw.com
  • Package: SOT-23
  • Lead Free: Yes
  • Revision: 2018

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
Absolute Maximum Ratings @TA=25 unless otherwise noted
Drain-source voltage VDS -20 V
Gate-source voltage VGS 12 V
Continuous Drain Current (TJ = 150 C) ID TC=25C -2.2 A
Continuous Drain Current (TJ = 150 C) ID TC=70C -1.5 A
Continuous Drain Current ID TA=25C -2.2b,c A
Continuous Drain Current ID TA=70C -1.4b,c A
Continuous Source-Drain Diode Current IS TC=25C -1.5 A
Continuous Source-Drain Diode Current IS TA=25C -1b,c A
Pulsed Drain Current (t = 300 s) IDM -8 A
Maximum power dissipation PD TC=25C 1.7 W
Maximum power dissipation PD TC=70C 1.1 W
Maximum power dissipation PD TA=25C 1b,c W
Maximum power dissipation PD TA=70C 0.6b,c W
Operating Junction and Storage Temperature Range TJ,TSTG -55 150
Thermal Characteristics
Maximum junction-to-ambient a RJA Steady-State 120 145 /W
Maximum junction-to-ambient a RJA 5 s 140 175 /W
Maximum junction-to-foot Steady-State RJC 62 78 /W
Electrical Characteristics @TA=25 unless otherwise noted
Drain-source breakdown voltage BVDSS VGS=0V, ID=-250A -20 V
Zero gate voltage drain current IDSS VDS=-20V, VGS=0V -1 A
Gate-body leakage IGSS VDS=0V, VGS=12V 100 nA
Gate threshold voltage VGS(th) VDS=VGS, ID=-250A -0.5 -0.65 -1.0 V
Drain-source on-state resistance a RDS(ON) VGS=-4.5V, ID=-2A 95 120 m
Drain-source on-state resistance a RDS(ON) VGS=-2.5V, ID=-1A 130 150 m
Forward transconductance a gfs VDS=-5V, ID=-1A 5 S
Dynamic Characteristics b
Input capacitance CISS VDS=-10V ,VGS=0V f=1.0MHz 280 pF
Output capacitance COSS 60 pF
Reverse transfer capacitance CRSS 48 pF
Switching Characteristics
Turn-on delay time tD(ON) VDD=-10V ID=-2A VGEN=-4.5V RL=9.1ohm RGEN=1ohm 13 ns
Rise time tr 21 ns
Turn-off delay time tD(OFF) 23 ns
Fall time tf 9 ns
Total gate charge Qg VDS=-10V,ID=-2A VGS=-4.5V 4.8 nC
Gate-source charge Qgs 0.8 nC
Gate-drain charge Qgd 1.2 nC
Drain-Source Diode Characteristics
Diode forward voltage VSD VGS=0V, Is=-1A -0.81 -1.2 V
Order Code Package Base Qty Delivery Mode Marking
SI2301F SOT-23 3K Tape and reel 2301F
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 2.250 2.550 0.089 0.100
E1 1.200 1.400 0.047 0.055
e 0.950 TYP. 0.037 TYP.
e1 1.800 2.000 0.071 0.079
L 0.300 0.500 0.012 0.020
L1 0.550 REF. 0.022 REF.
0 8 0 8

2410121620_BORN-SI2301F_C5439975.pdf

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