SOT23 Package Lead Free P Channel MOSFET BORN SI2301F Suitable for Surface Mount and PWM Applications
Product Overview
The SI2301F is a P-Channel MOSFET featuring advanced trench process technology for high power and current handling capability. It is designed for surface mount applications using the SOT-23 package. This product is lead-free. Ideal for PWM applications and load switching.
Product Attributes
- Brand: Not explicitly stated, but associated with www.born-tw.com
- Package: SOT-23
- Lead Free: Yes
- Revision: 2018
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings @TA=25 unless otherwise noted | ||||||
| Drain-source voltage | VDS | -20 | V | |||
| Gate-source voltage | VGS | 12 | V | |||
| Continuous Drain Current (TJ = 150 C) | ID | TC=25C | -2.2 | A | ||
| Continuous Drain Current (TJ = 150 C) | ID | TC=70C | -1.5 | A | ||
| Continuous Drain Current | ID | TA=25C | -2.2b,c | A | ||
| Continuous Drain Current | ID | TA=70C | -1.4b,c | A | ||
| Continuous Source-Drain Diode Current | IS | TC=25C | -1.5 | A | ||
| Continuous Source-Drain Diode Current | IS | TA=25C | -1b,c | A | ||
| Pulsed Drain Current (t = 300 s) | IDM | -8 | A | |||
| Maximum power dissipation | PD | TC=25C | 1.7 | W | ||
| Maximum power dissipation | PD | TC=70C | 1.1 | W | ||
| Maximum power dissipation | PD | TA=25C | 1b,c | W | ||
| Maximum power dissipation | PD | TA=70C | 0.6b,c | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Maximum junction-to-ambient a | RJA | Steady-State | 120 | 145 | /W | |
| Maximum junction-to-ambient a | RJA | 5 s | 140 | 175 | /W | |
| Maximum junction-to-foot Steady-State | RJC | 62 | 78 | /W | ||
| Electrical Characteristics @TA=25 unless otherwise noted | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID=-250A | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS=-20V, VGS=0V | -1 | A | ||
| Gate-body leakage | IGSS | VDS=0V, VGS=12V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=-250A | -0.5 | -0.65 | -1.0 | V |
| Drain-source on-state resistance a | RDS(ON) | VGS=-4.5V, ID=-2A | 95 | 120 | m | |
| Drain-source on-state resistance a | RDS(ON) | VGS=-2.5V, ID=-1A | 130 | 150 | m | |
| Forward transconductance a | gfs | VDS=-5V, ID=-1A | 5 | S | ||
| Dynamic Characteristics b | ||||||
| Input capacitance | CISS | VDS=-10V ,VGS=0V f=1.0MHz | 280 | pF | ||
| Output capacitance | COSS | 60 | pF | |||
| Reverse transfer capacitance | CRSS | 48 | pF | |||
| Switching Characteristics | ||||||
| Turn-on delay time | tD(ON) | VDD=-10V ID=-2A VGEN=-4.5V RL=9.1ohm RGEN=1ohm | 13 | ns | ||
| Rise time | tr | 21 | ns | |||
| Turn-off delay time | tD(OFF) | 23 | ns | |||
| Fall time | tf | 9 | ns | |||
| Total gate charge | Qg | VDS=-10V,ID=-2A VGS=-4.5V | 4.8 | nC | ||
| Gate-source charge | Qgs | 0.8 | nC | |||
| Gate-drain charge | Qgd | 1.2 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode forward voltage | VSD | VGS=0V, Is=-1A | -0.81 | -1.2 | V | |
| Order Code | Package | Base Qty | Delivery Mode | Marking |
|---|---|---|---|---|
| SI2301F | SOT-23 | 3K | Tape and reel | 2301F |
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 2.250 | 2.550 | 0.089 | 0.100 |
| E1 | 1.200 | 1.400 | 0.047 | 0.055 |
| e | 0.950 TYP. | 0.037 TYP. | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.550 REF. | 0.022 REF. | ||
| 0 | 8 | 0 | 8 |
2410121620_BORN-SI2301F_C5439975.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.