Durable low current low voltage PNP transistor CBI 2N3906U for electronic component applications
Key Attributes
Model Number:
2N3906U
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
2N3906U
Package:
SOT-89
Product Description
Product Overview
This PNP transistor is designed as a compliment to the 2N3904U, offering low current and low voltage capabilities. It is suitable for various electronic applications requiring a reliable PNP transistor.
Product Attributes
- Marking: 2A
- Package: Plastic-Encapsulate Transistors
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Symbol | Parameter | Test Conditions | Value | Units |
|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||
| VCBO | Collector-Base Voltage | -40 | V | |
| VCEO | Collector-Emitter Voltage | -40 | V | |
| VEBO | Emitter-Base Voltage | -6 | V | |
| IC | Collector Current - Continuous | -0.2 | A | |
| PC | Collector Power Dissipation | 0.5 | W | |
| TJ | Junction Temperature | 150 | ||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||
| V(BR)CBO | Collector-base breakdown voltage | IC=-10A, IE=0 | -40 | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-1mA, IB=0 | -40 | V |
| V(BR)EBO | Emitter-base breakdown voltage | IE=-10A, IC=0 | -6 | V |
| ICBO | Collector cut-off current | VCB=-30V, IE=0 | -0.05 | A |
| IEBO | Emitter cut-off current | VEB=-6V, IC=0 | -0.05 | A |
| hFE | DC current gain | VCE=-1V, IC=-0.1mA | 60 | |
| VCE=-1V, IC=-1mA | 80 | |||
| VCE=-1V, IC=-10mA | 100 - 300 | |||
| VCE=-1V, IC=-50mA | 60 | |||
| hFE(5) | DC current gain | VCE=-1V, IC=-100mA | 30 | |
| VCE(sat) | Collector-emitter saturation voltage | IC=-10mA, IB=-1mA | -0.25 | V |
| IC=-50mA, IB=-5mA | -0.4 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=-10mA, IB=-1mA | -0.65 -0.85 | V |
| IC=-50mA, IB=-5mA | -0.95 | V | ||
| fT | Transition frequency | VCE=-20V, IC=-10mA, f=100MHz | 250 | MHz |
| Cc | Collector capacitance | VCB=-5V, IE=0, f=1MHz | 4.5 | pF |
| Ce | Emitter capacitance | VEB=-0.5V, IC=0, f=1MHz | 10 | pF |
| NF | Noise figure | VCE=-5V, IC=-0.1mA, f=10Hz-15.7kHz, RS=1K | 4 | dB |
| td | Delay time | 35 | nS | |
| tr | Rise time | 35 | nS | |
| tS | Storage time | 225 | nS | |
| tf | Fall time | IC=-10mA , IB1=-IB2= -1mA | 75 | nS |
| ICEX | Collector cut-off current | VCB=-30V, VBE(off)=-3V | -0.05 | A |
| Tstg | Storage Temperature | -55-150 | ||
| RJA | Thermal resistance from junction to ambient | 250 | /W | |
2410121653_CBI-2N3906U_C2928257.pdf
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