Power management component BORN BM3402 N Channel Enhancement Mode MOSFET in compact SOT 23 package
Key Attributes
Model Number:
BM3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.1A
Operating Temperature -:
-40℃~+150℃
RDS(on):
28mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
800mV
Reverse Transfer Capacitance (Crss@Vds):
30pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
240pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
3.1nC@15V
Mfr. Part #:
BM3402
Package:
SOT-23
Product Description
Product Overview
The BM3402 is an N-Channel Enhancement-Mode MOSFET in a SOT-23 package, designed for efficient power management. It features low RDS(on) at 10V VGS and 3.3V logic-level control, making it suitable for DC-to-DC converters, power management in battery-driven portables, low-side load switches, and charging switches. Its Pb-free and RoHS compliant nature ensures environmental adherence.
Product Attributes
- Brand: BM3402
- Type: N-Channel Enhancement-Mode MOSFET
- Package: SOT-23
- Compliance: PbFree, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Common Ratings (TA=25C Unless Otherwise Noted) | ||||||
| VGS | Gate-Source Voltage | 16 | V | |||
| V(BR)DSS | Drain-Source Breakdown Voltage | 30 | V | |||
| TJ | Maximum Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature Range | -50 | 150 | C | ||
| ID (Pulse) | Pulse Drain Current | Mounted on Large Heat Sink, TA=25C | 20.4 | A | ||
| ID (Continuous) | Continuous Drain Current | TA=25C | 5.1 | A | ||
| ID (Continuous) | Continuous Drain Current | TA=70C | 4 | A | ||
| PD | Maximum Power Dissipation | TA=25C | 1.5 | W | ||
| PD | Maximum Power Dissipation | TA=70C | 0.9 | W | ||
| RJA | Thermal Resistance Junction-Ambient | 80 | C/W | |||
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V (TA=25) | -- | -- | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS=24V, VGS=0V (TA=125) | -- | -- | 100 | uA |
| IGSS | Gate-Body Leakage Current | VGS=16V, VDS=0V | -- | -- | 100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250A | 0.5 | 0.8 | 1.2 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=4A | -- | 28 | 36 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=3A | -- | 34 | 50 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.3V, ID=2A | -- | 40 | 60 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=2.5V, ID=1A | -- | 55 | 80 | m |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | -- | 240 | -- | pF |
| Coss | Output Capacitance | -- | 35 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 30 | -- | pF | |
| Qg | Total Gate Charge | VDS=15V, ID=4A, VGS=4.5V | -- | 3.1 | -- | nC |
| Qgs | Gate Source Charge | -- | 0.4 | -- | nC | |
| Qgd | Gate Drain Charge | -- | 1.3 | -- | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn on Delay Time | VDD=15V, ID=1A, RG=3.3, VGS=10V | -- | 4.4 | -- | ns |
| tr | Turn on Rise Time | -- | 2.6 | -- | ns | |
| td(off) | Turn Off Delay Time | - | 25.5 | -- | ns | |
| tf | Turn Off Fall Time | -- | 3.3 | -- | ns | |
| Source Drain Diode Characteristics | ||||||
| ISD | Source drain current (Body Diode) | TA=25 | -- | -- | 1.8 | A |
| VSD | Forward on voltage | Tj=25, ISD=4A, VGS=0V | -- | 0.85 | 1.2 | V |
2409300114_BORN-BM3402_C431498.pdf
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